Datasheet > FQD16N25CTM_12

FQD16N25CTM_12

更新时间： 2024-10-02 11:59:23

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
8页	842K
描述
250V N-Channel MOSFET

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数据手册

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FQD16N25CTM_12 数据手册

September 2012

QFET

FQD16N25C

250V N-Channel MOSFET

Features

Description

•

16A, 250V, R_DS(on)= 0.27Ω @V_GS= 10 V

Low gate charge ( typical 41 nC)

Low Crss ( typical 68 pF)

Fast switching

100% avalanche tested

Improved dv/dt capability

RoHS compliant

These N-Channel enhancement mode power field effect

transistors are produced using Fairchild’s proprietary, planar

stripe, DMOS technology.

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the avalanche

and commutation mode. These devices are well suited for high

efficiency switching DC/DC converters, switch mode power

supplies, DC-AC converters for uninterrupted power supplies

and motor controls.

D-PAK

FQD Series

Absolute Maximum Ratings

Symbol

Parameter

FQD16N25C

Units

V_DSS

I_D

Drain-Source Voltage

250

Drain Current

- Continuous (T_C= 25°C)

- Continuous (T_C= 100°C)

- Pulsed

10.1

(Note 1)

I_DM

Drain Current

V_GSS

E_AS

I_AR

Gate-Source Voltage

± 30

432

(Note 2)

(Note 1)

(Note 3)

Single Pulsed Avalanche Energy

Avalanche Current

E_AR

dv/dt

P_D

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Power Dissipation (T_C= 25°C)

160

V/ns

5.5

160

- Derate above 25°C

1.28

-55 to +150

W/°C

°C

T_J, T_STG

T_L

Operating and Storage Temperature Range

Maximum lead temperature for soldering purposes,

1/8" from case for 5 seconds

300

°C

Thermal Characteristics

Symbol

Parameter

FQD16N25C

Units

°C/W

R_θJC

R_θJA

Thermal Resistance, Junction-to-Case

0.78

110

Thermal Resistance, Junction-to-Ambient

°C/W

FQD16N25C Rev. C0

www.fairchildsemi.com

12 3 4 5 6 7 8

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