Datasheet > FQD13N10LTM

FQD13N10LTM

更新时间： 2024-11-06 17:15:23

品牌	Logo	应用领域
友台半导体 - UMW		/
页数	文件大小	规格书
7页	752K
描述
种类:N-Channel;漏源电压（Vdss）:100V;持续漏极电流（Id）（在25°C时）:10A;Vgs(th)(V):±20;漏源导通电阻:180mΩ@10V

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FQD13N10LTM 数据手册

UMW

FQD13N10L

100V N-Channel MOSFET

Description

This advanced MOSFET technology has been especially

tailored to reduce on-state resistance, and to provide

superior switching performance and high avalanche

energy strength. These devices are suitable for switched

mode power supplies, audio amplifier, DC motor control,

and variable switching power applications.

Features

V_DS(V) = 100V

I_D= 10A (V_GS= 10V)

R_DS(ON)<180mΩ (V_GS= 10V),I_D= 5.0 A

Absolute Maximum Ratings T_C= 25°C unless otherwise noted.

Symbol

Parameter

FQD13N10L

Unit

Drain-Source Voltage

100

DSS

- Continuous (T = 25°C)

Drain Current

- Continuous (T = 100°C)

6.3

(Note 1)

Drain Current

- Pulsed

± 20

Gate-Source Voltage

GSS

(Note 2)

(Note 1)

(Note 3)

Single Pulsed Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

4.0

V/ns

dv/dt

6.0

Power Dissipation (T = 25°C)

2.5

Power Dissipation (T = 25°C)

- Derate above 25°C

0.32

-55 to +150

W/°C

°C

T , T

Operating and Storage Temperature Range

STG

Maximum Lead Temperature for Soldering,

1/8” from Case for 5 Seconds

300

°C

Thermal Characteristics

FQD13N10L

Unit

Symbol

Parameter

R_JC

R_JA

Thermal Resistance, Junction to Case, Max.

3.13

110

Thermal Resistance, Junction to Ambient (Minimum Pad of 2-oz Copper), Max.

Thermal Resistance, Junction to Ambient (*1 in²Pad of 2-oz Copper), Max.

^oC/W

www.umw-ic.com

UTD Semiconductor Co.,Limited

12 3 4 5 6 7

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