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FQD13N06LTM PDF预览

FQD13N06LTM

更新时间： 2024-11-25 11:14:31
品牌 Logo 应用领域
安森美 - ONSEMI 开关脉冲晶体管
页数 文件大小 规格书
11页 1162K
描述
功率 MOSFET，N 沟道，逻辑电平，QFET®，60 V，11 A，115 mΩ，DPAK

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中文翻译

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FQD13N06LTM 技术参数

是否无铅： 不含铅生命周期：Active
包装说明：SMALL OUTLINE, R-PSSO-G2Reach Compliance Code：not_compliant
ECCN代码：EAR99HTS代码：8541.29.00.95
风险等级：0.55雪崩能效等级（Eas）：90 mJ
外壳连接：DRAIN配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：60 V最大漏极电流 (Abs) (ID)：11 A
最大漏极电流 (ID)：11 A最大漏源导通电阻：0.145 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJEDEC-95代码：TO-252
JESD-30 代码：R-PSSO-G2JESD-609代码：e3
湿度敏感等级：1元件数量：1
端子数量：2工作模式：ENHANCEMENT MODE
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：28 W最大脉冲漏极电流 (IDM)：44 A
认证状态：Not Qualified子类别：FET General Purpose Power
表面贴装：YES端子面层：Tin (Sn)
端子形式：GULL WING端子位置：SINGLE
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

FQD13N06LTM 数据手册

 浏览型号FQD13N06LTM的Datasheet PDF文件第2页浏览型号FQD13N06LTM的Datasheet PDF文件第3页浏览型号FQD13N06LTM的Datasheet PDF文件第4页浏览型号FQD13N06LTM的Datasheet PDF文件第5页浏览型号FQD13N06LTM的Datasheet PDF文件第6页浏览型号FQD13N06LTM的Datasheet PDF文件第7页 
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FQD13N06LTM 替代型号

型号 品牌 替代类型 描述 数据表
FQD13N06L FAIRCHILD

功能相似

 60V LOGIC N-Channel MOSFET
BUK92150-55A NXP

功能相似

 TrenchMOS logic level FET

与FQD13N06LTM相关器件

型号 品牌 获取价格 描述 数据表
FQD13N06LTM_NL FAIRCHILD

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 		Power Field-Effect Transistor, 11A I(D), 60V, 0.145ohm, 1-Element, N-Channel, Silicon, Met
FQD13N06TF FAIRCHILD

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 		Power Field-Effect Transistor, 10A I(D), 60V, 0.14ohm, 1-Element, N-Channel, Silicon, Meta
FQD13N06TF_NL FAIRCHILD

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 		Power Field-Effect Transistor, 10A I(D), 60V, 0.14ohm, 1-Element, N-Channel, Silicon, Meta
FQD13N06TM FAIRCHILD

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 		N-Channel QFET® MOSFET 60 V, 10 A, 140 mΩ
FQD13N06TM ONSEMI

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 		功率 MOSFET，N 沟道，QFET®，60 V，10 A，140 mΩ，DPAK
FQD13N10 FAIRCHILD

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 		100V N-Channel MOSFET
FQD13N10_09 FAIRCHILD

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 		100V N-Channel MOSFET
FQD13N10_13 FAIRCHILD

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 		N-Channel QFET MOSFET
FQD13N10L FAIRCHILD

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 		100V LOGIC N-Channel MOSFET
FQD13N10LTF FAIRCHILD

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 		暂无描述

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