生命周期: | Obsolete | 零件包装代码: | TO-252 |
包装说明: | SMALL OUTLINE, R-PSSO-G2 | 针数: | 3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.67 | 雪崩能效等级(Eas): | 85 mJ |
外壳连接: | DRAIN | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 60 V | 最大漏极电流 (ID): | 10 A |
最大漏源导通电阻: | 0.14 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-252 | JESD-30 代码: | R-PSSO-G2 |
JESD-609代码: | e3 | 元件数量: | 1 |
端子数量: | 2 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | N-CHANNEL |
最大脉冲漏极电流 (IDM): | 40 A | 认证状态: | Not Qualified |
表面贴装: | YES | 端子面层: | MATTE TIN |
端子形式: | GULL WING | 端子位置: | SINGLE |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
FQD13N06LTF | FAIRCHILD | Power Field-Effect Transistor, 11A I(D), 60V, 0.145ohm, 1-Element, N-Channel, Silicon, Met |
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FQD13N06LTF | ROCHESTER | 11A, 60V, 0.145ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3 |
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FQD13N06LTF_NL | FAIRCHILD | Power Field-Effect Transistor, 11A I(D), 60V, 0.145ohm, 1-Element, N-Channel, Silicon, Met |
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FQD13N06LTM | ROCHESTER | 11A, 60V, 0.145ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3 |
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FQD13N06LTM | FAIRCHILD | Power Field-Effect Transistor, 11A I(D), 60V, 0.145ohm, 1-Element, N-Channel, Silicon, Met |
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FQD13N06LTM | ONSEMI | 功率 MOSFET,N 沟道,逻辑电平,QFET®,60 V,11 A,115 mΩ,DP |
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