Datasheet > FQD13N06LTM

FQD13N06LTM

更新时间： 2024-10-03 17:15:23

品牌	Logo	应用领域
友台半导体 - UMW		/
页数	文件大小	规格书
6页	783K
描述
种类:N-Channel;漏源电压（Vdss）:60V;持续漏极电流（Id）（在25°C时）:5.5A;Vgs(th)(V):±20;漏源导通电阻:115mΩ@10V

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数据手册

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FQD13N06LTM 数据手册

FQD13N06L

UMW

60V N -Channel MOSFET

Features

• V

60V

DS =

I = 5.5 A

•

DS(ON)

(at V =10V) < 115mΩ

DS(ON)

(at V =5V) < 145mΩ

Low Gate Charge (Typ. 4.8 nC)

Low Crss (Typ. 17 pF)

•

2, 4

•

Low Level Gate Drive Requirements Allowing

Direct Operation form Logic Drivers

1 G

Absolute Maximum Ratings T_C= 25^oC unless otherwise noted.

Symbol

Parameter

FQD13N06LTM

Unit

Drain-Source Voltage

DSS

- Continuous (T = 25°C)

Drain Current

- Continuous (T = 100°C)

(Note 1)

Drain Current

- Pulsed

Gate-Source Voltage

± 20

GSS

(Note 2)

(Note 1)

(Note 3)

Single Pulsed Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

2.8

V/ns

dv/dt

7.0

Power Dissipation (T = 25°C) *

2.5

Power Dissipation (T = 25°C)

- Derate above 25°C

Operating and Storage Temperature Range

Maximum Lead Temperature for Soldering,

1/8" from Case 5for Seconds

0.22

-55 to +150

W/°C

°C

T , T

STG

300

°C

Thermal Characteristics

Symbol

Parameter

Unit

FQD13N06LTM

R_JC

R_JA

Thermal Resistance, Junction to Case, Max.

2.5

110

Thermal Resistance, Junction to Ambient (Minimum Pad of 2-oz Copper), Max.

Thermal Resistance, Junction to Ambient (*1 in²Pad of 2-oz Copper), Max.

^oC/W

www.umw-ic.com

UTD Semiconductor Co.,Limited

12 3 4 5 6

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