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FQD12N20TM PDF预览

FQD12N20TM

更新时间： 2024-11-21 11:14:19
品牌 Logo 应用领域
安森美 - ONSEMI 开关脉冲晶体管
页数 文件大小 规格书
11页 1059K
描述
功率 MOSFET，N 沟道，QFET®，200 V，9.0 A，280 mΩ，DPAK

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中文翻译

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FQD12N20TM 技术参数

是否无铅： 不含铅生命周期：Active
包装说明：DPAK-3Reach Compliance Code：not_compliant
ECCN代码：EAR99HTS代码：8541.29.00.95
Factory Lead Time：1 week风险等级：0.65
雪崩能效等级（Eas）：210 mJ外壳连接：DRAIN
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：200 V
最大漏极电流 (Abs) (ID)：9 A最大漏极电流 (ID)：9 A
最大漏源导通电阻：0.28 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码：TO-252JESD-30 代码：R-PSSO-G2
JESD-609代码：e3湿度敏感等级：1
元件数量：1端子数量：2
工作模式：ENHANCEMENT MODE最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：55 W
最大脉冲漏极电流 (IDM)：36 A认证状态：Not Qualified
子类别：FET General Purpose Power表面贴装：YES
端子面层：Tin (Sn)端子形式：GULL WING
端子位置：SINGLE处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

FQD12N20TM 数据手册

 浏览型号FQD12N20TM的Datasheet PDF文件第2页浏览型号FQD12N20TM的Datasheet PDF文件第3页浏览型号FQD12N20TM的Datasheet PDF文件第4页浏览型号FQD12N20TM的Datasheet PDF文件第5页浏览型号FQD12N20TM的Datasheet PDF文件第6页浏览型号FQD12N20TM的Datasheet PDF文件第7页 
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中文翻译

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FQD12N20TM 替代型号

型号 品牌 替代类型 描述 数据表
FQD12N20LTM ONSEMI

类似代替

 功率 MOSFET，N 沟道，逻辑电平，QFET®，200 V，9.0 A，280 mΩ，
FQD18N20V2TM ONSEMI

类似代替

 功率 MOSFET，N 沟道，QFET®，200 V，15 A，140 mΩ，DPAK

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