Datasheet > FQD12P10 (KQD12P10)

FQD12P10 (KQD12P10)

更新时间： 2024-10-03 18:09:51

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
4页	2919K
描述
P-Channel MOSFET

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FQD12P10 (KQD12P10) 数据手册

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SMD Type

MOSFET

P-Channel MOSFET

FQD12P10 (KQD12P10)

TO-252

Unit: mm

+0.15

-0.15

6.50

+0.1

-0.1

2.30

+0.8

-0.7

+0.2

5.30

-0.2

■ Features

0.50

● VDS (V) =-100V

● ID =-9.4 A (VGS =-10V)

● R^DS(ON)＜ 290mΩ (VGS =-10V)

● Low gate charge

● Low Crss

0.127

max

+0.1

-0.1

0.80

0.1

● Fast switching

2.3

4.60

0.60⁺_-

+0.15

-0.15

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Drain-Source Voltage

Symbol

Rating

-100

±30

-9.4

-6

Unit

Gate-Source Voltage

Tc = 25°C

Continuous Drain Current

Tc = 100°C

Pulsed Drain Current

Avalanche Current

-37.6

-9.4

370

Single Pulsed Avalanche Energy

Repetitive Avalanche Energy

(Note.1)

V/ns

Peak Diode Recovery dv/dt (Note.2)

dv/dt

-6

Ta = 25°C

Tc = 25°C

2.5

Power Dissipation

Power Dissipation - Derate above 25°C

Thermal Resistance.Junction- to-Ambient

Thermal Resistance, Junction-to-Case

0.4

W/℃

℃/W

(Note.3)

thJA

thJC

110

2.5

Maximum lead temperature for soldering purposes,

1/8" from case for 5 seconds

300

℃

Junction Temperature

150

Junction Storage Temperature Range

stg

-55 to 150

Note.1: L = 6.3mH, IAS = -9.4A, VDD = -25V, R

= 25 Ω, Starting T

= 25°C

Note.2: I^SD≤ -11.5A, di/dt ≤ 300A/μs, VDD ≤ BVDSS, Starting TJ = 25°C

Note.3: When mounted on the minimum pad size recommended (PCB Mount)

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