Datasheet > FQD12P10TM_AS004

FQD12P10TM_AS004

更新时间： 2024-01-15 02:16:21

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
8页	877K
描述
POWER, FET

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数据手册

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FQD12P10TM_AS004 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	,	Reach Compliance Code：	compliant
风险等级：	5.76	Is Samacsys：	N
JESD-609代码：	e3	湿度敏感等级：	1
端子面层：	Matte Tin (Sn)	Base Number Matches：	1

FQD12P10TM_AS004 数据手册

February 2010

FQD12P10TM_F085

100V P-Channel MOSFET

General Description

Features

These P-Channel enhancement mode power field effect

transistors are produced using Fairchild’s proprietary,

planar stripe, DMOS technology.

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode. These devices are well

suited for low voltage applications such as audio amplifier,

high efficiency switching DC/DC converters, and DC motor

control.

•

-9.4A, -100V, R

= 0.29Ω @V = -10 V

DS(on) GS

Low gate charge ( typical 21 nC)

Low Crss ( typical 65 pF)

Fast switching

100% avalanche tested

Improved dv/dt capability

•

Qualified to AEC Q101

RoHS Compliant

D-PAK

Absolute Maximum Ratings

T = 25°C unless otherwise noted

Symbol

Parameter

Ratings

-100

-9.4

Units

Drain-Source Voltage

DSS

- Continuous (T = 25°C)

Drain Current

- Continuous (T = 100°C)

-6.0

(Note 1)

Drain Current

- Pulsed

-37.6

± 30

Gate-Source Voltage

GSS

(Note 2)

(Note 1)

(Note 3)

Single Pulsed Avalanche Energy

Avalanche Current

370

-9.4

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

5.0

V/ns

dv/dt

-6.0

Power Dissipation (T = 25°C) *

2.5

Power Dissipation (T = 25°C)

- Derate above 25°C

Operating and Storage Temperature Range

0.4

W/°C

°C

T , T

-55 to +150

STG

Maximum lead temperature for soldering purposes,

300

°C

1/8! from case for 5 seconds

Thermal Characteristics

Symbol

Parameter

Typ

Max

Units

°C/W

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient *

Thermal Resistance, Junction-to-Ambient

2.5

θJC

θJA

110

* When mounted on the minimum pad size recommended (PCB Mount)

FQD12P10TM_F085 Rev. A

www.fairchildsemi.com

12 3 4 5 6 7 8

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