Datasheet > FGH60N60SMD

FGH60N60SMD

更新时间： 2023-09-03 20:36:58

品牌	Logo	应用领域
安森美 - ONSEMI		局域网 PC 栅瞄准线双极性晶体管功率控制
页数	文件大小	规格书
11页	485K
描述
IGBT，600V，60A，场截止

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中文翻译

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数据手册

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FGH60N60SMD 数据手册

IGBT - Field Stop

600 V, 60 A

FGH60N60SMD

Description

Using novel field stop IGBT technology, ON Semiconductor’s new

series of field stop 2 generation IGBTs offer the optimum

www.onsemi.com

performance for solar inverter, UPS, welder, telecom, ESS and PFC

applications where low conduction and switching losses are essential.

CES

Features

600 V

60 A

• Maximum Junction Temperature: T = 175°C

• Positive Temperature Co−efficient for easy Parallel Operating

• High Current Capability

• Low Saturation Voltage: V

• High Input Impedance

= 1.9 V (Typ.) @ I = 60 A

CE(sat)

• Fast Switching: E

= 7.5 uJ/A

OFF

• Tightened Parameter Distribution

• This Device is Pb−Free and is RoHS Compliant

Applications

• Solar Inverter, UPS, Welder, PFC, Telecom, ESS

COLLECTOR

(FLANGE)

TO−247−3LD

CASE 340CK

MARKING DIAGRAM

$Y&Z&3&K

FGH60N60

SMD

= ON Semiconductor Logo

= Assembly Plant Code

= Numeric Date Code

= Lot Code

FGH60N60SMD

= Specific Device Code

ORDERING INFORMATION

See detailed ordering and shipping information on page 2 of

this data sheet.

Publication Order Number:

January, 2020 − Rev. 3

FGH60N60SMD/D

12 3 4 5 6 7...11

中文翻译

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FGH60N60SMMF	MICROSS	获取价格	Insulated Gate Bipolar Transistor,
FGH60N60SMMW	MICROSS	获取价格	Insulated Gate Bipolar Transistor,
FGH60N60UFD	FAIRCHILD	获取价格	600V, 60A Field Stop IGBT
FGH60N60UFDTU	FAIRCHILD	获取价格	600V, 60A Field Stop IGBT
FGH60N60UFDTU	ONSEMI	获取价格	IGBT，650V，20A，1.8V，TO-247，低 VCE(ON)，场截止
FGH60N60UFDTU-F085	ONSEMI	获取价格	IGBT，600V，60A，1.8V，TO-247 场截止
FGH60N6S2	FAIRCHILD	获取价格	600V, SMPS II Series N-Channel IGBT
FGH60T65SHD-F155	ONSEMI	获取价格	IGBT，650V，60A，场截止沟槽
FGH60T65SQD-F155	ONSEMI	获取价格	IGBT，650V，60A，场截止沟槽