是否无铅: | 不含铅 | 生命周期: | Active |
包装说明: | FLANGE MOUNT, R-PSFM-T3 | Reach Compliance Code: | not_compliant |
ECCN代码: | EAR99 | HTS代码: | 8541.29.00.95 |
风险等级: | 1.37 | Is Samacsys: | N |
外壳连接: | COLLECTOR | 最大集电极电流 (IC): | 120 A |
集电极-发射极最大电压: | 600 V | 配置: | SINGLE WITH BUILT-IN DIODE |
最大降落时间(tf): | 80 ns | 门极发射器阈值电压最大值: | 6.5 V |
门极-发射极最大电压: | 20 V | JEDEC-95代码: | TO-247AB |
JESD-30 代码: | R-PSFM-T3 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 298 W |
认证状态: | Not Qualified | 子类别: | Insulated Gate BIP Transistors |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | POWER CONTROL | 晶体管元件材料: | SILICON |
标称断开时间 (toff): | 204 ns | 标称接通时间 (ton): | 83 ns |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FGH60N60UFDTU-F085 | ONSEMI |
获取价格 |
IGBT,600V,60A,1.8V,TO-247 场截止 |
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FGH60N6S2 | FAIRCHILD |
获取价格 |
600V, SMPS II Series N-Channel IGBT |
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FGH60T65SHD-F155 | ONSEMI |
获取价格 |
IGBT,650V,60A,场截止沟槽 |
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FGH60T65SQD-F155 | ONSEMI |
获取价格 |
IGBT,650V,60A,场截止沟槽 |
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FGH75N60SF | FAIRCHILD |
获取价格 |
600V, 75A Field Stop IGBT |
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FGH75N60SFTU | FAIRCHILD |
获取价格 |
600V, 75A Field Stop IGBT |
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FGH75N60UF | FAIRCHILD |
获取价格 |
600V, 75A Field Stop IGBT |
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FGH75N60UFTU | FAIRCHILD |
获取价格 |
600V, 75A Field Stop IGBT |
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FGH75N60UFTU | ONSEMI |
获取价格 |
IGBT,600V,75A,场截止 |
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FGH75T65SHD-F155 | ONSEMI |
获取价格 |
IGBT,650V,75A 场截止沟槽 |
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