5秒后页面跳转
FDS8884 PDF预览

FDS8884

更新时间: 2024-09-16 10:32:23
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体晶体管开关脉冲光电二极管PC
页数 文件大小 规格书
6页 306K
描述
N-Channel PowerTrench MOSFET 30V, 8.5A, 23mOhm

FDS8884 数据手册

 浏览型号FDS8884的Datasheet PDF文件第2页浏览型号FDS8884的Datasheet PDF文件第3页浏览型号FDS8884的Datasheet PDF文件第4页浏览型号FDS8884的Datasheet PDF文件第5页浏览型号FDS8884的Datasheet PDF文件第6页 
February 2006  
FDS8884  
N-Channel PowerTrench® MOSFET  
30V, 8.5A, 23mΩ  
General Descriptions  
Features  
„ Max rDS(on) = 23mat VGS = 10V, ID = 8.5A  
„ Max rDS(on) = 30mat VGS = 4.5V, ID = 7.5A  
„ Low gate charge  
This N-Channel MOSFET has been designed specifically  
to improve the overall efficiency of DC/DC converters using  
either synchronous or conventional switching PWM  
controllers. It has been optimized for low gate charge, low  
rDS(on) and fast switching speed.  
„ 100% RG Tested  
„ RoHS Compliant  
D
D
D
5
6
7
8
4
3
2
1
D
G
S
S
SO-8  
S
MOSFET Maximum Ratings TA = 25°C unless otherwise noted  
Symbol  
VDS  
VGS  
Parameter  
Ratings  
Units  
Drain to Source Voltage  
Gate to Source Voltage  
Drain Current Continuous  
Pulsed  
30  
±20  
V
V
(Note 1a)  
(Note 2)  
8.5  
A
ID  
40  
A
EAS  
PD  
Single Pulse Avalanche Energy  
32  
mJ  
Power dissipation  
Derate above 25oC  
2.5  
W
20  
mW/oC  
oC  
TJ, TSTG  
Operating and Storage Temperature  
-55 to 150  
Thermal Characteristics  
RθJA  
RθJA  
Thermal Resistance, Junction to Ambient  
(Note 1a)  
(Note 1)  
50  
25  
oC/W  
oC/W  
Thermal Resistance, Junction to Case  
Package Marking and Ordering Information  
Device Marking  
Device  
Package  
Reel Size  
330mm  
Tape Width  
12mm  
Quantity  
FDS8884  
FDS8884  
SO-8  
2500 units  
©2006 Fairchild Semiconductor Corporation  
FDS8884 Rev. A  
1
www.fairchildsemi.com  

FDS8884 替代型号

型号 品牌 替代类型 描述 数据表
FDS9412 FAIRCHILD

类似代替

Single N-Channel Enhancement Mode Field Effect Transistor
IRF7403TRPBF INFINEON

功能相似

Generation V Technology
FDS9412A FAIRCHILD

功能相似

N-Channel PowerTrench MOSFET 30V, 8A, 21mOhm

与FDS8884相关器件

型号 品牌 获取价格 描述 数据表
FDS8896 FAIRCHILD

获取价格

N-Channel PowerTrench?? MOSFET
FDS8896 ONSEMI

获取价格

N 沟道,PowerTrench® MOSFET,30V,15A,6.0mΩ
FDS8896_07 FAIRCHILD

获取价格

N-Channel PowerTrench㈢ MOSFET
FDS8896_NL FAIRCHILD

获取价格

Power Field-Effect Transistor, 15A I(D), 30V, 0.006ohm, 1-Element, N-Channel, Silicon, Met
FDS8896-F123 FAIRCHILD

获取价格

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
FDS89141 FAIRCHILD

获取价格

Dual N-Channel PowerTrench® MOSFET 100 V, 3.
FDS89141 ONSEMI

获取价格

双 N 沟道,PowerTrench® MOSFET,100V,3.5A,62mΩ
FDS89161 FAIRCHILD

获取价格

Dual N-Channel PowerTrench® MOSFET 100 V, 2.
FDS89161 ONSEMI

获取价格

双 N 沟道,屏蔽门极,PowerTrench® MOSFET,100 V,2.7A,10
FDS89161 (KDS89161) KEXIN

获取价格

N-Channel MOSFET