型号 | 品牌 | 替代类型 | 描述 | 数据表 |
FDS9412 | FAIRCHILD |
类似代替 |
Single N-Channel Enhancement Mode Field Effect Transistor | |
IRF7403TRPBF | INFINEON |
功能相似 |
Generation V Technology | |
FDS9412A | FAIRCHILD |
功能相似 |
N-Channel PowerTrench MOSFET 30V, 8A, 21mOhm |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FDS8896 | FAIRCHILD |
获取价格 |
N-Channel PowerTrench?? MOSFET | |
FDS8896 | ONSEMI |
获取价格 |
N 沟道,PowerTrench® MOSFET,30V,15A,6.0mΩ | |
FDS8896_07 | FAIRCHILD |
获取价格 |
N-Channel PowerTrench㈢ MOSFET | |
FDS8896_NL | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 15A I(D), 30V, 0.006ohm, 1-Element, N-Channel, Silicon, Met | |
FDS8896-F123 | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | |
FDS89141 | FAIRCHILD |
获取价格 |
Dual N-Channel PowerTrench® MOSFET 100 V, 3. | |
FDS89141 | ONSEMI |
获取价格 |
双 N 沟道,PowerTrench® MOSFET,100V,3.5A,62mΩ | |
FDS89161 | FAIRCHILD |
获取价格 |
Dual N-Channel PowerTrench® MOSFET 100 V, 2. | |
FDS89161 | ONSEMI |
获取价格 |
双 N 沟道,屏蔽门极,PowerTrench® MOSFET,100 V,2.7A,10 | |
FDS89161 (KDS89161) | KEXIN |
获取价格 |
N-Channel MOSFET |