FDS89161

更新时间： 2024-11-06 12:23:39

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
6页	266K
描述
Dual N-Channel PowerTrenchÂ® MOSFET 100 V, 2.7 A, 105 mÎ©

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FDS89161 数据手册

June 2011

FDS89161

Dual N-Channel PowerTrench^®MOSFET

100 V, 2.7 A, 105 mΩ

Features

General Description

Max r_DS(on)= 105 mΩ at V_GS= 10 V, I_D= 2.7 A

This N-Channel MOSFET is produced using Fairchild

Semiconductor‘s advanced Power Trench^®process that has

Max r_DS(on)= 171 mΩ at V_GS= 6 V, I_D= 2.1 A

been optimized for r_DS(on), switching performance and

High performance trench technology for extremely low r_DS(on)

ruggedness.

High power and current handling capability in a widely used

surface mount package

Applications

100% UIL Tested

RoHS Compliant

Synchronous Rectifier

Primary Switch For Bridge Topology

Pin 1

SO-8

MOSFET Maximum Ratings T_A= 25 °C unless otherwise noted

Symbol

V_DS

V_GS

Parameter

Ratings

Units

Drain to Source Voltage

Gate to Source Voltage

Drain Current -Continuous

-Pulsed

100

±20

2.7

I_D

E_AS

P_D

Single Pulse Avalanche Energy

Power Dissipation

(Note 3)

T_C= 25 °C

T_A= 25 °C

Power Dissipation

(Note1a)

1.6

T_J, T_STG

Operating and Storage Junction Temperature Range

-55 to +150

°C

Thermal Characteristics

R_θJC

R_θJA

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

(Note 1)

4.0

°C/W

(Note 1a)

Package Marking and Ordering Information

Device Marking

Device

Package

Reel Size

13 ’’

Tape Width

12 mm

Quantity

FDS89161

SO-8

2500 units

FDS89161 Rev. C2

www.fairchildsemi.com

12 3 4 5 6

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