Datasheet > FDS8896-F123

FDS8896-F123

更新时间： 2024-11-06 21:09:07

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
12页	638K
描述
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

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FDS8896-F123 技术参数

April 2007

FDS8896

N-Channel PowerTrench^®MOSFET

30V, 15A, 6.0mΩ

Features

General Description

r_DS(on)= 6.0mΩ, V_GS= 10V, I_D= 15A

This N-Channel MOSFET has been designed specifically to

improve the overall efficiency of DC/DC converters using

either synchronous or conventional switching PWM

controllers. It has been optimized for low gate charge, low

r_DS(on)= 7.3mΩ, V_GS= 4.5V, I_D= 14A

High performance trench technology for extremely low

r_DS(on)

r_DS(on)and fast switching speed.

Applications

Low gate charge

DC/DC converters

High power and current handling capability

RoHS Compliant

Branding Dash

SO-8

FDS8896 Rev. B

www.fairchildsemi.com

12 3 4 5 6 7...12

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型号	品牌	获取价格	描述	数据表
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FDS89161	FAIRCHILD	获取价格	Dual N-Channel PowerTrenchÂ® MOSFET 100 V, 2.
FDS89161	ONSEMI	获取价格	双 N 沟道，屏蔽门极，PowerTrench® MOSFET，100 V，2.7A，10
FDS89161 (KDS89161)	KEXIN	获取价格	N-Channel MOSFET
FDS89161LZ	ONSEMI	获取价格	双 N 沟道，屏蔽门极，PowerTrench® MOSFET，100 V，2.7A，10
FDS89161LZ	FAIRCHILD	获取价格	Max rDS(on) = 105 mÎ© at VGS = 10 V, ID = 2.7
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FDS8928A	FAIRCHILD	获取价格	Dual N & P-Channel Enhancement Mode Field Effect Transistor