型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FDS8896_NL | FAIRCHILD |
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Power Field-Effect Transistor, 15A I(D), 30V, 0.006ohm, 1-Element, N-Channel, Silicon, Met | |
FDS8896-F123 | FAIRCHILD |
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Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | |
FDS89141 | FAIRCHILD |
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Dual N-Channel PowerTrench® MOSFET 100 V, 3. | |
FDS89141 | ONSEMI |
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双 N 沟道,PowerTrench® MOSFET,100V,3.5A,62mΩ | |
FDS89161 | FAIRCHILD |
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Dual N-Channel PowerTrench® MOSFET 100 V, 2. | |
FDS89161 | ONSEMI |
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双 N 沟道,屏蔽门极,PowerTrench® MOSFET,100 V,2.7A,10 | |
FDS89161 (KDS89161) | KEXIN |
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N-Channel MOSFET | |
FDS89161LZ | ONSEMI |
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双 N 沟道,屏蔽门极,PowerTrench® MOSFET,100 V,2.7A,10 | |
FDS89161LZ | FAIRCHILD |
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Max rDS(on) = 105 mΩ at VGS = 10 V, ID = 2.7 | |
FDS8926A | FAIRCHILD |
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Dual N-Channel Enhancement Mode Field Effect Transistor |