生命周期: | Obsolete | 零件包装代码: | SOT |
包装说明: | SMALL OUTLINE, R-PDSO-G8 | 针数: | 8 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.29.00.95 | 风险等级: | 5.69 |
Is Samacsys: | N | 其他特性: | LOGIC LEVEL COMPATIBLE |
配置: | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | 最小漏源击穿电压: | 30 V |
最大漏极电流 (ID): | 7.9 A | 最大漏源导通电阻: | 0.029 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PDSO-G8 |
元件数量: | 2 | 端子数量: | 8 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | N-CHANNEL |
最大脉冲漏极电流 (IDM): | 30 A | 认证状态: | Not Qualified |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | DUAL | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FDS6986SS62Z | FAIRCHILD |
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Power Field-Effect Transistor, 7.9A I(D), 30V, 0.029ohm, 2-Element, N-Channel, Silicon, Me | |
FDS6990 | FAIRCHILD |
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Dual 30V N-Channel PowerTrench SyncFET | |
FDS6990A | FAIRCHILD |
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Dual N-Channel Logic Level PowerTrenchTM MOSFET | |
FDS6990A | ONSEMI |
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双 N 沟道,逻辑电平,PowerTrench® MOSFET,30V,7.5A,18mΩ | |
FDS6990A_NB23071 | FAIRCHILD |
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Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | |
FDS6990A_NBNP005A | FAIRCHILD |
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Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | |
FDS6990A_NL | FAIRCHILD |
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暂无描述 | |
FDS6990AD84Z | FAIRCHILD |
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Small Signal Field-Effect Transistor, 7.5A I(D), 30V, 2-Element, N-Channel, Silicon, Metal | |
FDS6990AL86Z | FAIRCHILD |
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Small Signal Field-Effect Transistor, 7.5A I(D), 30V, 2-Element, N-Channel, Silicon, Metal | |
FDS6990A-NBBM020 | FAIRCHILD |
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Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET |