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FDS6679

更新时间: 2024-11-11 22:49:03
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体小信号场效应晶体管开关光电二极管PC
页数 文件大小 规格书
5页 70K
描述
30 Volt P-Channel PowerTrench MOSFET

FDS6679 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:SOIC
包装说明:SMALL OUTLINE, R-PDSO-G8针数:8
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.28
Samacsys Confidence:3Samacsys Status:Released
Samacsys PartID:1015489Samacsys Pin Count:8
Samacsys Part Category:Integrated CircuitSamacsys Package Category:Small Outline Packages
Samacsys Footprint Name:SOIC8+-Samacsys Released Date:2020-05-18 13:36:21
Is Samacsys:N配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:30 V最大漏极电流 (Abs) (ID):13 A
最大漏极电流 (ID):13 A最大漏源导通电阻:0.009 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PDSO-G8
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:8
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:P-CHANNEL最大功率耗散 (Abs):2.5 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

FDS6679 数据手册

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May 2001  
FDS6679  
30 Volt P-Channel PowerTrenchÒ MOSFET  
General Description  
Features  
This P-Channel MOSFET has been designed  
specifically to improve the overall efficiency of DC/DC  
converters using either synchronous or conventional  
switching PWM controllers, and battery chargers.  
· –13 A, –30 V. RDS(ON) = 9 mW @ VGS = –10 V  
RDS(ON) = 13 mW @ VGS = – 4.5 V  
· Extended VGSS range (±25V) for battery applications  
These MOSFETs feature faster switching and lower  
gate charge than other MOSFETs with comparable  
RDS(ON) specifications.  
· High performance trench technology for extremely  
low RDS(ON)  
The result is a MOSFET that is easy and safer to drive  
(even at very high frequencies), and DC/DC power  
supply designs with higher overall efficiency.  
· High power and current handling capability  
D
D
5
6
7
8
4
3
2
1
D
D
G
S
S
SO-8  
S
Absolute Maximum Ratings TA=25oC unless otherwise noted  
Symbol  
VDSS  
Parameter  
Drain-Source Voltage  
Ratings  
Units  
V
–30  
VGSS  
ID  
Gate-Source Voltage  
V
A
±25  
–13  
Drain Current – Continuous  
– Pulsed  
(Note 1a)  
–50  
PD  
Power Dissipation for Single Operation  
(Note 1a)  
(Note 1b)  
2.5  
W
1.2  
(Note 1c)  
1.0  
TJ, TSTG  
Operating and Storage Junction Temperature Range  
–55 to +175  
°C  
Thermal Characteristics  
Thermal Resistance, Junction-to-Ambient  
Thermal Resistance, Junction-to-Case  
(Note 1a)  
(Note 1)  
50  
25  
RqJA  
°C/W  
°C/W  
RqJC  
Package Marking and Ordering Information  
Device Marking  
Device  
Reel Size  
Tape width  
Quantity  
FDS6679  
FDS6679  
13’’  
12mm  
2500 units  
FDS6679 Rev C (W)  
Ó2001 Fairchild Semiconductor Corporation  

FDS6679 替代型号

型号 品牌 替代类型 描述 数据表
FDS4435BZ ONSEMI

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