Datasheet > FDS6679AZ

FDS6679AZ

更新时间： 2024-11-13 17:15:39

品牌	Logo	应用领域
友台半导体 - UMW		/
页数	文件大小	规格书
8页	276K
描述
种类:P-Channel;漏源电压（Vdss）:-30V;持续漏极电流（Id）（在25°C时）:-13.5A;Vgs(th)(V):±20;漏源导通电阻:11mΩ@-10V

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FDS6679AZ 数据手册

UMW

FDS6679AZ

P-Channel 30 V (D-S) MOSFET

PRODUCT SUMMARY

_D(A)^d

V_DS(V)

R_DS(on)(mΩ)

Q_g(Typ.)

11 at V_GS= - 10 V

15 at V_GS= - 4.5 V

- 13.5

- 11.6

- 30

29.5 nC

P-Channel MOSFET

APPLICATIONS

SOP-8

•

Load Switch

Notebook Adaptor Switch

Top View

ABSOLUTE MAXIMUM RATINGS

Parameter

T = 25 °C, unless otherwise noted

Symbol

V_DS

Limit

- 30

Unit

Drain-Source Voltage

V_GS

Gate-Source Voltage

± 20

_C= 25 °C

- 13.5

- 11.9

- 10.9^{a, b}

- 8.6^{a, b}

- 50

T_C= 70 °C

T_A= 25 °C

T_A= 70 °C

Continuous Drain Current (T_J= 150 °C)

I_D

I_DM

I_S

Pulsed Drain Current

- 4.1

- 2.2^{a, b}

T_C= 25 °C

T_A= 25 °C

Continuous Source-Drain Diode Current

I_AS

Avalanche Current

- 20

L = 0.1 mH

E_AS

Single-Pulse Avalanche Energy

_C= 25 °C

5.0

T_C= 70 °C

T_A= 25 °C

T_A= 70 °C

3.2

P_D

Maximum Power Dissipation

2.7^{a, b}

1.7^{a, b}

- 55 to 150

T_J, T_stg

Operating Junction and Storage Temperature Range

°C

THERMAL RESISTANCE RATINGS

Parameter

Maximum Junction-to-Ambient^{a, c}

Symbol

Typical

Maximum

Unit

°C/W

R_thJA

R_thJF

t ≤ 10 s

Maximum Junction-to-Foot

Steady State

Notes:

a. Surface mounted on 1" x 1" FR4 board.

b. t = 10 s.

c. Maximum under Steady State conditions is 85 °C/W.

d. Based on T_C= 25 °C.

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UTD Semiconductor Co.,Limited

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