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FDS6680A PDF预览

FDS6680A

更新时间: 2024-11-12 17:15:31
品牌 Logo 应用领域
友台半导体 - UMW /
页数 文件大小 规格书
6页 404K
描述
种类:N-Channel;漏源电压(Vdss):30V;持续漏极电流(Id)(在25°C时):12A;Vgs(th)(V):±20;漏源导通电阻:9.5mΩ@10V;漏源导通电阻:13mΩ@4.5V

FDS6680A 数据手册

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R
FDS6680  
UMW  
30V N-Channel MOSFET  
General Description  
This N-Channel Logic Level MOSFET is  
produced using the advanced Power Trench  
process that has been especially tailored to  
minimize the on-state resistance and yet  
G
S
S
5
6
7
8
4
3
2
1
D
D
D
D
maintain superior switching performance.  
These devices are well suited for low voltage and  
battery powered applications where low in-line  
power loss and fast switching are required.  
S
SOP-8  
Features  
VDS (V) =30V  
ID= 12 A  
(V = 10V)  
GS  
RDS(ON) 9.5m  
Ω(V  
GS  
=10V)  
RDS(ON) 13 m  
Ω(V  
GS  
=4.5V)  
Ultra-low gate charge  
High performance trench technology for extremely  
low RDS(ON)  
High power and current handling capability  
TA=25oC unless otherwise noted  
Absolute Maximum Ratings  
Symbol  
VDSS  
Parameter  
Drain-Source Voltage  
Ratings  
Units  
V
30  
±20  
12.5  
50  
VGSS  
Gate-Source Voltage  
ID  
Drain Current – Continuous  
– Pulsed  
(Note 1a)  
A
Power Dissipation for Single Operation  
(Note 1a)  
(Note 1b)  
(Note 1c)  
2.5  
1.2  
1.0  
PD  
W
TJ, TSTG  
Operating and Storage Junction Temperature Range  
–55 to +150  
°C  
Thermal Characteristics  
Thermal Resistance, Junction-to-Case  
(Note 1a)  
(Note 1)  
50  
25  
RθJA  
°C/W  
Thermal Resistance, Junction-to-Case  
RθJC  
www.umw-ic.com  
1
UTD Semiconductor Co.,Limited  

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