Datasheet > FDS6679_05

FDS6679_05

更新时间： 2024-09-24 04:18:39

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
4页	93K
描述
30 Volt P-Channel PowerTrench㈢ MOSFET

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FDS6679_05 数据手册

March 2005

FDS6679

30 Volt P-Channel PowerTrench^®MOSFET

General Description

Features

This P-Channel MOSFET has been designed

specifically to improve the overall efficiency of DC/DC

converters using either synchronous or conventional

switching PWM controllers, and battery chargers.

• –13 A, –30 V. R_DS(ON)= 9 mΩ @ V_GS= –10 V

R_DS(ON)= 13 mΩ @ V_GS= – 4.5 V

• Extended V_GSSrange (±25V) for battery applications

These MOSFETs feature faster switching and lower

gate charge than other MOSFETs with comparable

R_DS(ON)specifications.

• High performance trench technology for extremely

low R_DS(ON)

The result is a MOSFET that is easy and safer to drive

(even at very high frequencies), and DC/DC power

supply designs with higher overall efficiency.

• High power and current handling capability

SO-8

Absolute Maximum Ratings T_A=25^oC unless otherwise noted

Symbol

V_DSS

Parameter

Drain-Source Voltage

Ratings

Units

–30

V_GSS

I_D

Gate-Source Voltage

±25

–13

Drain Current – Continuous

– Pulsed

(Note 1a)

–50

P_D

Power Dissipation for Single Operation

(Note 1a)

(Note 1b)

2.5

1.2

(Note 1c)

1.0

T_J, T_STG

Operating and Storage Junction Temperature Range

–55 to +175

°C

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

(Note 1a)

(Note 1)

R_θJA

°C/W

R_θJC

Package Marking and Ordering Information

Device Marking

Device

Reel Size

Tape width

Quantity

FDS6679

13’’

12mm

2500 units

FDS6679 Rev C1 (W)

12 3 4

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