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FDP2710-F085 PDF预览

FDP2710-F085

更新时间: 2024-11-27 11:12:23
品牌 Logo 应用领域
安森美 - ONSEMI 局域网开关晶体管
页数 文件大小 规格书
8页 515K
描述
N 沟道,PowerTrench® MOSFET,250V,50A,47mΩ

FDP2710-F085 技术参数

是否无铅: 不含铅生命周期:Active
包装说明:FLANGE MOUNT, R-PSFM-T3Reach Compliance Code:compliant
风险等级:0.83雪崩能效等级(Eas):483 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:250 V最大漏极电流 (Abs) (ID):50 A
最大漏极电流 (ID):4 A最大漏源导通电阻:0.047 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):260 W认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICON

FDP2710-F085 数据手册

 浏览型号FDP2710-F085的Datasheet PDF文件第2页浏览型号FDP2710-F085的Datasheet PDF文件第3页浏览型号FDP2710-F085的Datasheet PDF文件第4页浏览型号FDP2710-F085的Datasheet PDF文件第5页浏览型号FDP2710-F085的Datasheet PDF文件第6页浏览型号FDP2710-F085的Datasheet PDF文件第7页 
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