Datasheet > FDP2710-SW82258

FDP2710-SW82258

更新时间： 2024-09-14 21:21:47

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
8页	640K
描述
Transistor

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FDP2710-SW82258 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
Reach Compliance Code：	unknown	风险等级：	5.84
JESD-609代码：	e3	端子面层：	Matte Tin (Sn)
Base Number Matches：	1

FDP2710-SW82258 数据手册

November 2007

FDP2710

250V N-Channel PowerTrench MOSFET

General Description

Description

This N-Channel MOSFET is produced using Fairchild Semicon-

ductor’s advanced PowerTrench process that has been espe-

cially tailored to minimize the on-state resistance and yet

maintain superior switching performance.

•

50A, 250V, R_DS(on)= 36.3mΩ @V_GS= 10 V

Fast switching speed

Low gate charge

High performance trench technology for extremely low R_DS(on)

High power and current handling capability

RoHS compliant

Application

•

PDP application

TO-220

D S

Absolute Maximum Ratings

Symbol

Parameter

Ratings

250

Unit

V_DS

V_GS

I_D

Drain-Source Voltage

Gate-Source voltage

Drain Current

± 30

- Continuous (T_C= 25°C)

- Continuous (T_C= 100°C)

31.3

(Note 1)

(Note 2)

(Note 3)

I_DM

Drain Current

- Pulsed

See Figure 9

E_AS

dv/dt

P_D

Single Pulsed Avalanche Energy

Peak Diode Recovery dv/dt

145

4.5

V/ns

Power Dissipation

(T_C= 25°C)

- Derate above 25°C

260

2.1

W/°C

_J,T_STG

Operating and Storage Temperature Range

-55 to +150

300

°C

T_L

Maximum Lead Temperature for Soldering Purpose,

1/8” from Case for 5 Seconds

°C

Thermal Characteristics

Symbol

Parameter

Min

Max

0.48

62.5

Unit

°C/W

R_θJC

R_θJA

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient

FDP2710 Rev. A

www.fairchildsemi.com

12 3 4 5 6 7 8

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