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FDP3205

更新时间: 2024-09-15 03:36:27
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
8页 394K
描述
N-Channel PowerTrench㈢ MOSFET 55V, 100A, 7.5mヘ

FDP3205 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TO-220AB包装说明:ROHS COMPLIANT, TO-220, 3 PIN
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.34
Is Samacsys:N雪崩能效等级(Eas):365 mJ
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:55 V
最大漏极电流 (Abs) (ID):100 A最大漏极电流 (ID):100 A
最大漏源导通电阻:0.0075 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:175 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):150 W最大脉冲漏极电流 (IDM):390 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

FDP3205 数据手册

 浏览型号FDP3205的Datasheet PDF文件第2页浏览型号FDP3205的Datasheet PDF文件第3页浏览型号FDP3205的Datasheet PDF文件第4页浏览型号FDP3205的Datasheet PDF文件第5页浏览型号FDP3205的Datasheet PDF文件第6页浏览型号FDP3205的Datasheet PDF文件第7页 
May 2008  
FDP3205  
N-Channel PowerTrench MOSFET  
55V, 100A, 7.5mΩ  
®
Features  
Description  
RDS(on) = 6.1mΩ ( Typ.)@ VGS = 10V, ID = 59A  
High performance trench technology for extermly low RDS(on)  
High power and current handing capability  
RoHS compliant  
This N-Channel MOSFET is produced using Fairchild  
Semiconductor’s advanced PowerTrench process that has  
been especially tailored to minimize the on-state resistance  
and yet maintain superior switching performance.  
D
G
TO-220  
G D S  
FDP Series  
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted  
Symbol  
VDSS  
VGSS  
ID  
Parameter  
Ratings  
55  
Units  
V
Drain to Source Voltage  
Gate to Source Voltage  
Drain Current  
±20  
V
-Continuous (TC = 25oC)  
- Pulsed  
(Note 1)  
(Note 2)  
100  
A
IDM  
EAS  
Drain Current  
390  
A
Single Pulsed Avalanche Energy  
365  
mJ  
(TC = 25oC)  
- Derate above 25oC  
150  
W
PD  
Power Dissipation  
1.0  
W/oC  
oC  
TJ, TSTG  
Operating and Storage Temperature Range  
-55 to +175  
Thermal Characteristics  
Symbol  
Parameter  
Thermal Resistance, Junction to Case  
Thermal Resistance, Junction to Ambient  
Ratings  
1.0  
Units  
RθJC  
RθJA  
oC/W  
62.5  
©2008 Fairchild Semiconductor Corporation  
FDP3205 Rev. A  
1
www.fairchildsemi.com  

FDP3205 替代型号

型号 品牌 替代类型 描述 数据表
PHP54N06T,127 NXP

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TRANSISTOR 75 A, 55 V, 0.0093 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, SC-46,

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