Datasheet > FDP3632

FDP3632

更新时间： 2024-09-14 22:31:47

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
11页	261K
描述
N-Channel PowerTrench MOSFET 100V, 80A, 9mз

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替代型号

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FDP3632 数据手册

April 2003

FDB3632 / FDP3632 / FDI3632

N-Channel PowerTrench^®MOSFET

100V, 80A, 9mΩ

Features

Applications

•

r_DS(ON)= 7.5mΩ (Typ.), V_GS= 10V, I_D= 80A

Q_g(tot) = 84nC (Typ.), V_GS= 10V

Low Miller Charge

•

DC/DC converters and Off-Line UPS

Distributed Power Architectures and VRMs

Primary Switch for 24V and 48V Systems

High Voltage Synchronous Rectifier

Direct Injection / Diesel Injection Systems

42V Automotive Load Control

Low Q_RRBody Diode

UIS Capability (Single Pulse and Repetitive Pulse)

Qualified to AEC Q101

Formerly developmental type 82784

Electronic Valve Train Systems

DRAIN

(FLANGE)

SOURCE

DRAIN

(FLANGE)

DRAIN

SOURCE

DRAIN

GATE

SOURCE

TO-220AB

FDP SERIES

DRAIN

(FLANGE)

TO-262AB

FDI SERIES

TO-263AB

FDB SERIES

MOSFET Maximum Ratings T_C= 25°C unless otherwise noted

Symbol

V_DSS

V_GS

Parameter

Ratings

100

Units

Drain to Source Voltage

Gate to Source Voltage

Drain Current

±20

Continuous (T_C< 111^oC, V_GS= 10V)

Continuous (T_amb= 25^oC, V_GS= 10V, R_θJA= 43^oC/W)

Pulsed

I_D

Figure 4

393

E_AS

Single Pulse Avalanche Energy (Note 1)

Power dissipation

Derate above 25^oC

W/^oC

^oC

310

P_D

2.07

T_J, T_STG

Operating and Storage Temperature

-55 to 175

Thermal Characteristics

R_θJC

R_θJA

Thermal Resistance Junction to Case TO-220, TO-263, TO-262

Thermal Resistance Junction to Ambient TO-220, TO-262 (Note 2)

Thermal Resistance Junction to Ambient TO-263, 1in²copper pad area

0.48

^oC/W

This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a

copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/

Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.

All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems

certification.

FDB3632 / FDP3632 / FDI3632 Rev. B1

12 3 4 5 6 7...11

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FDP3632 替代型号

型号	品牌	替代类型	描述	数据表
IRFZ14PBF	VISHAY	功能相似	Power MOSFET
STP120NF10	STMICROELECTRONICS	功能相似	N-CHANNEL 100V - 0.009 W - 120A DPAK/TO-220 STripFET II POWER MOSFET
STP80NF10	STMICROELECTRONICS	功能相似	N-CHANNEL 100V - 0.012ohm - 80A D2PAK LOW GAT

与FDP3632相关器件

型号	品牌	获取价格	描述	数据表
FDP3632_NL	FAIRCHILD	获取价格	Power Field-Effect Transistor, 12A I(D), 100V, 0.009ohm, 1-Element, N-Channel, Silicon, Me
FDP3651U	FAIRCHILD	获取价格	N-Channel PowerTrench MOSFET 100V, 80A, 15mOHM
FDP3651U	ONSEMI	获取价格	N 沟道 PowerTrench® MOSFET 100V，80A，18mΩ
FDP3652	FAIRCHILD	获取价格	N-Channel PowerTrench MOSFET 100V, 61A, 16mз
FDP3652	ONSEMI	获取价格	N-Channel PowerTrench® MOSFET, 100V, 61A, 16m
FDP3652_NL	FAIRCHILD	获取价格	Power Field-Effect Transistor, 9A I(D), 100V, 0.016ohm, 1-Element, N-Channel, Silicon, Met
FDP3672	FAIRCHILD	获取价格	N-Channel PowerTrench MOSFET 105V, 41A, 33mз
FDP3672	ONSEMI	获取价格	N 沟道，PowerTrench® MOSFET，105V，41A，33mΩ
FDP3672_NL	FAIRCHILD	获取价格	Power Field-Effect Transistor, 5.9A I(D), 105V, 0.033ohm, 1-Element, N-Channel, Silicon, M
FDP3682	TRIPATH	获取价格	STEREO 200W CLASS-T DIGITAL AUDIO AMPLIFIER DRIVER USING DIGITAL POWER PROCESSING TECHNOLO

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