Datasheet > FDMS8690_07

FDMS8690_07

更新时间： 2024-09-25 03:36:27

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
7页	320K
描述
N-Channel Power Trench㈢ MOSFET 30V, 27A, 9.0mз

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FDMS8690_07 数据手册

February 2007

FDMS8690

N-Channel Power Trench^®MOSFET

30V, 27A, 9.0mΩ

Features

General Description

Max r_DS(on)= 9.0mΩ at V_GS= 10V, I_D= 14.0A

This device has been designed specifically to improve the

efficiency of DC/DC converters. Using new techniques in

MOSFET construction, the various components of gate charge

and capacitance have been optimized to reduce switching

losses. Low gate resistance and very low Miller charge enable

excellent performance with both adaptive and fixed dead time

gate drive circuits. Very low r_DS(on)has been maintained to

provide an extremely versatile device.

Max r_DS(on)= 12.5mΩ at V_GS= 4.5V, I_D= 11.5A

High performance trench technology for extremely low r_DS(on)

and gate charge

Minimal Qgd (2.9nC typical)

RoHS Compliant

Application

High Efficiency DC-DC converters.

Notebook CPU power supply

Multi purpose Point of Load

Pin 1

Power 56 (Bottom view)

MOSFET Maximum Ratings T_A= 25°C unless otherwise noted

Symbol

V_DS

V_GS

Parameter

Ratings

Units

Drain to Source Voltage

Gate to Source Voltage

±20

Drain Current -Continuous (Package limited)

-Continuous (Silicon limited)

-Continuous

T_C= 25°C

_C= 25°C

I_D

T_A= 25°C

(Note 1a)

-Pulsed

100

Power Dissipation

T_C= 25°C

T_A= 25°C

37.8

2.5

P_D

Power Dissipation

T_J, T_STG

Operating and Storage Junction Temperature Range

-55 to +150

°C

Thermal Characteristics

R_θJC

R_θJA

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

3.3

°C/W

(Note 1a)

Package Marking and Ordering Information

Device Marking

Device

Package

Reel Size

13’’

Tape Width

12mm

Quantity

FDMS8690

Power 56

3000 units

FDMS8690 Rev.C2

www.fairchildsemi.com

12 3 4 5 6 7

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