Datasheet > FDMS9620S_07

FDMS9620S_07

更新时间： 2024-11-13 03:36:27

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
9页	332K
描述
Dual N-Channel PowerTrench㈢ MOSFET

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中文翻译

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数据手册

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FDMS9620S_07 数据手册

July 2007

FDMS9620S

Dual N-Channel PowerTrench^®MOSFET

Q1: 30V, 16A, 21.5mΩ Q2: 30V, 18A, 13mΩ

Features

Q1: N-Channel

General Description

Max r_DS(on)= 21.5mΩ at V_GS= 10V, I_D= 7.5A

Max r_DS(on)= 29.5mΩ at V_GS= 4.5V, I_D= 6.5A

This device includes two specialized MOSFETs in a unique dual

Power 56 package. It is designed to provide an optimal

Synchronous Buck power stage in terms of efficiency and PCB

utilization. The low switching loss "High Side" MOSFET is

complementedbyaLowConductionLoss "LowSide" SyncFET.

Q2: N-Channel

Max r_DS(on)= 13mΩ at V_GS= 10V, I_D= 10A

Max r_DS(on)= 17mΩ at V_GS= 4.5V, I_D= 8.5A

Low Qg high side MOSFET

Applications

Low r_DS(on)low side MOSFET

Thermally efficient dual Power 56 package

Pinout optimized for simple PCB design

RoHS Compliant

Synchronous Buck Converter for:

Notebook System Power

General Purpose Point of Load

S1/D2

Power 56

MOSFET Maximum Ratings T_A= 25°C unless otherwise noted

Symbol

V_DS

V_GS

Parameter

Units

Drain to Source Voltage

Gate to Source Voltage

±20

Drain Current

-Continuous (Package limited) T_C= 25°C

-Continuous (Silicon limited)

-Continuous

_C= 25°C

I_D

T_A= 25°C

(Note 1a)

7.5

-Pulsed

Power Dissipation for Single Operation

T_A= 25°C

(Note 1a)

(Note 1b)

2.5

P_D

T_J, T_STG

Operating and Storage Junction Temperature Range

-55 to +150

°C

Thermal Characteristics

R_θJC

R_θJA

Thermal Resistance, Junction to Case

8.2

3.1

Thermal Resistance, Junction to Ambient

(Note 1a)

(Note 1b)

°C/W

120

Package Marking and Ordering Information

Device Marking

Device

Package

Reel Size

Tape Width

12mm

Quantity

FDMS9620S

Power 56

13”

3000 units

FDMS9620S Rev.D2

www.fairchildsemi.com

12 3 4 5 6 7...9

中文翻译

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