FDN302

更新时间： 2024-11-12 22:31:47

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
5页	105K
描述
P-Channel 2.5V Specified PowerTrench MOSFET

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数据手册

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FDN302 数据手册

October 2000

FDN302P

P-Channel 2.5V Specified PowerTrench MOSFET

General Description

Features

This P-Channel 2.5V specified MOSFET uses a rugged

gate version of Fairchild’s advanced PowerTrench

process. It has been optimized for power management

applications with a wide range of gate drive voltage

(2.5V – 12V).

• –20 V, –2.4 A. R_DS(ON)= 0.055 Ω @ V_GS= –4.5 V

_DS(ON)= 0.080 Ω @ V_GS= –2.5 V

• Fast switching speed

• High performance trench technology for extremely

Applications

low R_DS(ON)

• Power management

• Load switch

• SuperSOT^TM-3 provides low R_DS(ON)and 30% higher

power handling capability than SOT23 in the same

footprint

• Battery protection

SuperSOT^TM-3

Absolute Maximum Ratings T_A=25^oC unless otherwise noted

Symbol

V_DSS

Parameter

Drain-Source Voltage

Ratings

–20

Units

V_GSS

I_D

Gate-Source Voltage

Drain Current – Continuous

– Pulsed

±12

(Note 1a)

–2.4

–10

0.5

P_D

Maximum Power Dissipation

(Note 1a)

(Note 1b)

0.46

T_J, T_STG

Operating and Storage Junction Temperature Range

°C

–55 to +150

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

(Note 1a)

(Note 1)

250

R_θJA

°C/W

R_θJC

Package Marking and Ordering Information

Device Marking

Device

Reel Size

Tape width

Quantity

302

FDN302P

7’’

8mm

3000 units

FDN302P Rev C(W)

2000 Fairchild Semiconductor Corporation

12 3 4 5

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与FDN302相关器件

型号	品牌	获取价格	描述	数据表
FDN302P	FAIRCHILD	获取价格	P-Channel 2.5V Specified PowerTrench MOSFET
FDN302P	TI	获取价格	Contains all support circuitry needed for the ADS1148/ADS1248
FDN302P	ONSEMI	获取价格	P 沟道 2.5V 指定 PowerTrench® MOSFET -20V，-2.4A，5
FDN302P	UMW	获取价格	种类:P-Channel;漏源电压（Vdss）:-20V;持续漏极电流（Id）（在25°C
FDN302P_NL	FAIRCHILD	获取价格	Small Signal Field-Effect Transistor, 2.4A I(D), 20V, 1-Element, P-Channel, Silicon, Metal
FDN302PD87Z	FAIRCHILD	获取价格	Small Signal Field-Effect Transistor, 2.4A I(D), 20V, 1-Element, P-Channel, Silicon, Metal
FDN302P-F095	FAIRCHILD	获取价格	Transistor
FDN302PL99Z	FAIRCHILD	获取价格	Small Signal Field-Effect Transistor, 2.4A I(D), 20V, 1-Element, P-Channel, Silicon, Metal
FDN302PS62Z	FAIRCHILD	获取价格	Small Signal Field-Effect Transistor, 2.4A I(D), 20V, 1-Element, P-Channel, Silicon, Metal
FDN304P	TYSEMI	获取价格	SuperSOT-3