Datasheet > FDN304PZ

FDN304PZ

更新时间： 2024-11-13 12:49:43

品牌	Logo	应用领域
TYSEMI		晶体晶体管开关光电二极管 PC
页数	文件大小	规格书
2页	253K
描述
SuperSOT-3

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中文翻译

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数据手册

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FDN304PZ 数据手册

SMD Type

Product specification

FDN304P

General Description

Features

This P-Channel 1.8V specified MOSFET uses

Fairchild’s advanced low voltage PowerTrench process.

It has been optimized for battery power management

applications.

–2.4 A, –20 V. R_DS(ON)= 52 mW @ V_GS= –4.5 V

R_DS(ON)= 70 mW @ V_GS= –2.5 V

R_DS(ON)= 100 mW @ V_GS= –1.8 V

Fast switching speed

ESD protection diode

Applications

Battery management

Load switch

High performance trench technology for extremely

low R_DS(ON)

Battery protection

SuperSOT^TM-3 provides low R_DS(ON)and 30% higher

power handling capability than SOT23 in the same

footprint

SuperSOT^TM-3

Absolute Maximum Ratings T_A=25^oC unless otherwise noted

Symbol

V_DSS

Parameter

Drain-Source Voltage

Ratings

Units

–20

V_GSS

I_D

Gate-Source Voltage

Drain Current – Continuous

– Pulsed

±8

(Note 1a)

–2.4

–10

0.5

P_D

Maximum Power Dissipation

(Note 1a)

(Note 1b)

0.46

T_J, T_STG

Operating and Storage Junction Temperature Range

–55 to +150

°C

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

(Note 1a)

(Note 1)

250

R_qJA

°C/W

R_qJC

Package Marking and Ordering Information

Device Marking

Device

Reel Size

Tape width

Quantity

3000 units

04Z

FDN304PZ

7’’

8mm

http://www.twtysemi.com

1of 2

sales@twtysemi.com

4008-318-123

中文翻译

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与FDN304PZ相关器件

型号	品牌	获取价格	描述	数据表
FDN304PZ_NL	FAIRCHILD	获取价格	Small Signal Field-Effect Transistor, 2.4A I(D), 20V, 1-Element, P-Channel, Silicon, Metal
FDN306P	TYSEMI	获取价格	SuperSOT-3
FDN306P	FAIRCHILD	获取价格	P-Channel 1.8V Specified PowerTrench MOSFET
FDN306P	ONSEMI	获取价格	P 沟道，1.8V 指定，PowerTrench® MOSFET，-12V，-2.6A，4
FDN306P	UMW	获取价格	种类:P-Channel;漏源电压（Vdss）:-12V;持续漏极电流（Id）（在25°C
FDN306P_NL	FAIRCHILD	获取价格	Small Signal Field-Effect Transistor, 2.6A I(D), 12V, 1-Element, P-Channel, Silicon, Metal
FDN306PD87Z	FAIRCHILD	获取价格	Small Signal Field-Effect Transistor, 2.6A I(D), 12V, 1-Element, P-Channel, Silicon, Metal
FDN306P-F095	FAIRCHILD	获取价格	Transistor
FDN306P-G	FAIRCHILD	获取价格	Transistor
FDN308P	FAIRCHILD	获取价格	P-Channel 2.5V Specified PowerTrench MOSFET