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FDN304PZ PDF预览

FDN304PZ

更新时间: 2024-09-16 12:49:43
品牌 Logo 应用领域
TYSEMI 晶体晶体管开关光电二极管PC
页数 文件大小 规格书
2页 253K
描述
SuperSOT-3

FDN304PZ 数据手册

 浏览型号FDN304PZ的Datasheet PDF文件第2页 
Product specification  
FDN304P  
General Description  
Features  
This P-Channel 1.8V specified MOSFET uses  
Fairchild’s advanced low voltage PowerTrench process.  
It has been optimized for battery power management  
applications.  
·
–2.4 A, –20 V. RDS(ON) = 52 mW @ VGS = –4.5 V  
RDS(ON) = 70 mW @ VGS = –2.5 V  
RDS(ON) = 100 mW @ VGS = –1.8 V  
·
·
·
Fast switching speed  
ESD protection diode  
Applications  
·
·
·
Battery management  
Load switch  
High performance trench technology for extremely  
low RDS(ON)  
Battery protection  
·
SuperSOTTM -3 provides low RDS(ON) and 30% higher  
power handling capability than SOT23 in the same  
footprint  
D
D
S
S
G
SuperSOTTM-3  
G
Absolute Maximum Ratings TA=25oC unless otherwise noted  
Symbol  
VDSS  
Parameter  
Drain-Source Voltage  
Ratings  
Units  
V
–20  
VGSS  
ID  
Gate-Source Voltage  
Drain Current – Continuous  
– Pulsed  
V
A
±8  
(Note 1a)  
–2.4  
–10  
0.5  
PD  
Maximum Power Dissipation  
(Note 1a)  
(Note 1b)  
W
0.46  
TJ, TSTG  
Operating and Storage Junction Temperature Range  
–55 to +150  
°C  
Thermal Characteristics  
Thermal Resistance, Junction-to-Ambient  
Thermal Resistance, Junction-to-Case  
(Note 1a)  
(Note 1)  
250  
75  
RqJA  
°C/W  
°C/W  
RqJC  
Package Marking and Ordering Information  
Device Marking  
Device  
Reel Size  
Tape width  
Quantity  
3000 units  
04Z  
FDN304PZ  
7’’  
8mm  
http://www.twtysemi.com  
1of 2  
sales@twtysemi.com  
4008-318-123  

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