Datasheet > FDN306P

FDN306P

更新时间： 2024-09-16 12:49:43

品牌	Logo	应用领域
TYSEMI		/
页数	文件大小	规格书
2页	273K
描述
SuperSOT-3

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中文翻译

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数据手册

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FDN306P 数据手册

SMD Type

Product specification

FDN306P

General Description

Features

This P-Channel 1.8V specified MOSFET uses

Fairchild’s advanced low voltage PowerTrench process.

It has been optimized for battery power management

applications.

• –2.6 A, –12 V. R_DS(ON)= 40 mΩ @ V_GS= –4.5 V

_DS(ON)= 50 mΩ @ V_GS= –2.5 V

R_DS(ON)= 80 mΩ @ V_GS= –1.8 V

• Fast switching speed

Applications

• High performance trench technology for extremely

low R_DS(ON)

• Battery management

• Load switch

• SuperSOT^TM-3 provides low R_DS(ON)and 30% higher

power handling capability than SOT23 in the same

footprint

• Battery protection

SuperSOT^TM-3

Absolute Maximum Ratings T_A=25^oC unless otherwise noted

Symbol

Parameter

Ratings

Units

V_DSS

Drain-Source Voltage

–12

V_GSS

I_D

Gate-Source Voltage

Drain Current – Continuous

– Pulsed

(Note 1a)

–2.6

–10

P_D

Maximum Power Dissipation

(Note 1a)

(Note 1b)

0.5

0.46

T_J, T_STG

Operating and Storage Junction Temperature Range

–55 to +150

°C

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

(Note 1a)

(Note 1)

250

R_θJA

R_θJC

°C/W

Package Marking and Ordering Information

Device Marking

Device

Reel Size

Tape width

Quantity

3000 units

306

FDN306P

7’’

8mm

http://www.twtysemi.com

1of 2

sales@twtysemi.com

4008-318-123

中文翻译

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与FDN306P相关器件

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FDN306P_NL	FAIRCHILD	获取价格	Small Signal Field-Effect Transistor, 2.6A I(D), 12V, 1-Element, P-Channel, Silicon, Metal
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FDN306P-G	FAIRCHILD	获取价格	Transistor
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FDN308P	TYSEMI	获取价格	SuperSOT-3
FDN308P	ONSEMI	获取价格	P 沟道，2.5V 指定，PowerTrench™ MOSFET，-20V，-1.5A，1
FDN308P	UMW	获取价格	种类:P-Channel;漏源导通电阻:-20V;持续漏极电流（Id）（在25°C时）:-
FDN308P_NL	FAIRCHILD	获取价格	Small Signal Field-Effect Transistor, 1.5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal
FDN327N	FAIRCHILD	获取价格	N-Channel 1.8 Vgs Specified PowerTrench MOSFET