Datasheet > FDN302P

FDN302P

更新时间： 2024-11-14 17:15:51

品牌	Logo	应用领域
友台半导体 - UMW		/
页数	文件大小	规格书
5页	305K
描述
种类:P-Channel;漏源电压（Vdss）:-20V;持续漏极电流（Id）（在25°C时）:–2.4 A;Vgs(th)(V):±12;漏源导通电阻:55mΩ@-4.5V

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FDN302P 数据手册

UMW

FDN302P

P-Channel 2.5 V (D-S) MOSFET

SOT–23

General Description

This P-Channel 2.5V has been optimized for power

management applications with a wide range of gate

drive voltage (2.5V – 12V).

Applications

•ꢀ Power management

•ꢀ Load switch

1. GATE

2. SOURCE

3. DRAIN

•ꢀ Battery protection

Features

• –20 V, –2.4 A. R_DS(ON)= 55m Ω @ V_GS= –4.5 V

R_DS(ON)= 80 mΩ @ V_GS= –2.5 V

• Fast switching speed

• High performance trench technology for extremely

low R_DS(ON)

• SuperSOT^TM-3 provides low R_DS(ON)and 30% higher

power handling capability than SOT23 in the same

footprint

Absolute Maximum Ratings T_A=25^oC unless otherwise noted

Symbol

V_DSS

Parameter

Drain-Source Voltage

Ratings

–20

Units

V_GSS

I_D

Gate-Source Voltage

Drain Current – Continuous

– Pulsed

±12

(Note 1a)

–2.4

–10

0.5

P_D

Maximum Power Dissipation

(Note 1a)

(Note 1b)

0.46

T_J, T_STG

Operating and Storage Junction Temperature Range

°C

–55 to +150

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

(Note 1a)

(Note 1)

250

R_θJA

°C/W

R_θJC

www.umw-ic.com

UTD Semiconductor Co.,Limited

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