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FDN028N20 PDF预览

FDN028N20

更新时间: 2024-11-14 11:14:47
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
7页 321K
描述
N 沟道 PowerTrench® MOSFET 20V,6.1A,28mΩ

FDN028N20 数据手册

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DATA SHEET  
www.onsemi.com  
MOSFET – N-Channel,  
POWERTRENCH)  
V
r
MAX  
I MAX  
D
DS  
DS(on)  
20 V  
28 mW @ 4.5 V  
45 mW @ 2.5 V  
6.1 A  
20 V, 6.1 A, 28 mW  
FDN028N20  
General Description  
This N−Channel POWERTRENCH MOSFET is produced using  
onsemi’s advanced POWERTRENCH process that has been  
especially tailored to minimize on−state resistance and yet maintain  
low gate charge for superior switching performance.  
SOT−23/SUPERSOTt−23, 3 LEAD, 1.4x2.9  
CASE 527AG  
Features  
MARKING DIAGRAM  
28NM  
Max r  
Max r  
= 28 mW at V = 4.5 V, I = 5.2 A  
GS D  
DS(on)  
DS(on)  
= 45 mW at V = 2.5 V, I = 4.4 A  
GS  
D
High Performance Trench Technology for Extremely Low r  
DS(on)  
High Power and Current Handling Capability in a Widely Used  
Surface Mount Package  
28N = Specific Device Code  
M
= Date Code  
Fast Switching Speed  
100% UIL Tested  
This Device is Pb−Free, Halide Free and is RoHS Compliant  
PIN ASSIGNMENT  
Applications  
D
Primary DC−DC Switch  
Load Switch  
MOSFET MAXIMUM RATINGS (T = 25°C, unless otherwise noted)  
C
Symbol  
Parameter  
Drain to Source Voltage  
Gate to Source Voltage (Note 3)  
Ratings  
Unit  
V
V
DS  
20  
G
S
V
GS  
12  
V
I
D
Continuous  
Pulsed  
T = 25°C (Note 1a)  
6.1  
A
A
(Note 5)  
52  
ORDERING INFORMATION  
See detailed ordering and shipping information on page 5 of  
this data sheet.  
E
Single Pulse Avalanche Energy (Note 4)  
6
1.5  
mJ  
W
AS  
P
Power Dissipation  
(Note 1a)  
(Note 1b)  
D
0.6  
T , T  
Operating and Storage Junction  
Temperature Range  
−55 to 150  
°C  
J
STG  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
THERMAL CHARACTERISTICS (T = 25°C, unless otherwise noted)  
C
Symbol  
Parameter  
Ratings  
Unit  
R
Thermal Resistance, Junction−to−Case  
(Note 1)  
75  
°C/W  
q
JC  
R
Thermal Resistance, Junction−to−Ambient  
(Note 1a)  
80  
°C/W  
q
JA  
© Semiconductor Components Industries, LLC, 2016  
1
Publication Order Number:  
February, 2023 − Rev. 2  
FDN028N20/D  

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