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FDMS8888

更新时间： 2024-09-26 11:13:47
品牌 Logo 应用领域
安森美 - ONSEMI 开关脉冲光电二极管晶体管
页数 文件大小 规格书
8页 424K
描述
N沟道PowerTrench® MOSFET 30V，21A，9.5mΩ

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中文翻译

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FDMS8888 技术参数

是否无铅： 不含铅生命周期：Active
包装说明：SMALL OUTLINE, R-PDSO-N5Reach Compliance Code：not_compliant
ECCN代码：EAR99HTS代码：8541.29.00.95
Factory Lead Time：26 weeks风险等级：0.97
雪崩能效等级（Eas）：54 mJ外壳连接：DRAIN
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：30 V
最大漏极电流 (Abs) (ID)：21 A最大漏极电流 (ID)：13.5 A
最大漏源导通电阻：0.0095 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：R-PDSO-N5JESD-609代码：e3
湿度敏感等级：1元件数量：1
端子数量：5工作模式：ENHANCEMENT MODE
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：42 W最大脉冲漏极电流 (IDM)：80 A
子类别：FET General Purpose Power表面贴装：YES
端子面层：Tin (Sn)端子形式：NO LEAD
端子位置：DUAL处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

FDMS8888 数据手册

 浏览型号FDMS8888的Datasheet PDF文件第2页浏览型号FDMS8888的Datasheet PDF文件第3页浏览型号FDMS8888的Datasheet PDF文件第4页浏览型号FDMS8888的Datasheet PDF文件第5页浏览型号FDMS8888的Datasheet PDF文件第6页浏览型号FDMS8888的Datasheet PDF文件第7页 
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中文翻译

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 		功率 MOSFET，N 沟道，150V，85A，8.8mΩ，Power56 封装中
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FDMS9409L_F085 ONSEMI

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 		N-Channel Logic Level PowerTrench MOSFET
FDMS9409L-F085 ONSEMI

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 		N-Channel Logic Level PowerTrench® MOSFET 40V
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 		N 沟道，PowerTrench® MOSFET，40V，50A，4.4mΩ
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 		N 沟道，PowerTrench® MOSFET，40V，30A，6.3mΩ

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