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FDMS9600S

更新时间： 2024-11-14 11:14:19
品牌 Logo 应用领域
安森美 - ONSEMI 开关光电二极管晶体管
页数 文件大小 规格书
10页 407K
描述
双 N 沟道，PowerTrench® MOSFET，30V

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中文翻译

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FDMS9600S 技术参数

是否无铅： 不含铅生命周期：Active
包装说明：SMALL OUTLINE, R-PDSO-N8Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8541.29.00.95
Factory Lead Time：16 weeks风险等级：5.33
外壳连接：DRAIN配置：SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
最小漏源击穿电压：30 V最大漏极电流 (Abs) (ID)：108 A
最大漏极电流 (ID)：0.016 A最大漏源导通电阻：0.0085 Ω
FET 技术：METAL-OXIDE SEMICONDUCTOR最大反馈电容 (Crss)：375 pF
JESD-30 代码：R-PDSO-N8JESD-609代码：e4
湿度敏感等级：1元件数量：2
端子数量：8工作模式：ENHANCEMENT MODE
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：2.5 W认证状态：Not Qualified
子类别：FET General Purpose Power表面贴装：YES
端子面层：Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)端子形式：NO LEAD
端子位置：DUAL处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

FDMS9600S 数据手册

 浏览型号FDMS9600S的Datasheet PDF文件第2页浏览型号FDMS9600S的Datasheet PDF文件第3页浏览型号FDMS9600S的Datasheet PDF文件第4页浏览型号FDMS9600S的Datasheet PDF文件第5页浏览型号FDMS9600S的Datasheet PDF文件第6页浏览型号FDMS9600S的Datasheet PDF文件第7页 
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Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers  
will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor  
product management systems do not have the ability to manage part nomenclature that utilizes an underscore  
(_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain  
device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated  
device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please  
email any questions regarding the system integration to Fairchild_questions@onsemi.com.  
ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number  
of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right  
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中文翻译

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FDMT1D3N08B ONSEMI

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FDMT800100DC ONSEMI

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FDMT800120DC ONSEMI

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FDMT800150DC ONSEMI

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 		N 沟道双 CoolTM 88 PowerTrench® MOSFET 150V，99A，
FDMT800152DC ONSEMI

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 		N 沟道，双 Cool™ 88 PowerTrench® MOSFET，150V，72A，
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