Datasheet > FDMS9600S_08

FDMS9600S_08

更新时间： 2024-11-13 03:36:27

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
9页	502K
描述
Dual N-Channel PowerTrench㈢ MOSFET

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中文翻译

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数据手册

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FDMS9600S_08 数据手册

September 2008

FDMS9600S

Dual N-Channel PowerTrench^®MOSFET

Q1: 30V, 32A, 8.5mΩ Q2: 30V, 30A, 5.5mΩ

Features

General Description

Q1: N-Channel

This device includes two specialized MOSFETs in a unique dual

Power 56 package. It is designed to provide an optimal

Synchronous Buck power stage in terms of efficiency and PCB

utilization. The low switching loss "High Side" MOSFET is com-

plemented by a Low Conduction Loss "Low Side" SyncFET.

Max r_DS(on)= 8.5mΩ at V_GS= 10V, I_D= 12A

Max r_DS(on)= 12.4mΩ at V_GS= 4.5V, I_D= 10A

Q2: N-Channel

Max r_DS(on)= 5.5mΩ at V_GS= 10V, I_D= 16A

Max r_DS(on)= 7.0mΩ at V_GS= 4.5V, I_D= 14A

Applications

Synchronous Buck Converter for:

Low Qg high side MOSFET

Notebook System Power

Low r_DS(on)low side MOSFET

Thermally efficient dual Power 56 package

Pinout optimized for simple PCB design

RoHS Compliant

General Purpose Point of Load

S1/D2

Power 56

MOSFET Maximum Ratings T_A= 25°C unless otherwise noted

Symbol

V_DS

V_GS

Parameter

Units

Drain to Source Voltage

Gate to Source Voltage

±20

Drain Current

-Continuous (Package limited) T_C= 25°C

-Continuous (Silicon limited) T_C= 25°C

108

I_D

-Continuous

-Pulsed

T_A= 25°C

(Note 1a)

Power Dissipation for Single Operation

Operating and Storage Junction Temperature Range

(Note 1a)

(Note 1b)

2.5

1.0

P_D

T_J, T_STG

-55 to +150

°C

Thermal Characteristics

R_θJA

R_θJC

Thermal Resistance, Junction to Ambient

(Note 1a)

(Note 1b)

Thermal Resistance, Junction to Ambient

Thermal Resistance, Junction to Case

120

°C/W

1.2

Package Marking and Ordering Information

Device Marking

Device

Package

Reel Size

Tape Width

Quantity

3000 units

FDMS9600S

Power 56

13”

12mm

FDMS9600S Rev.D1

www.fairchildsemi.com

12 3 4 5 6 7...9

中文翻译

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