5秒后页面跳转
FDMS9600S_08 PDF预览

FDMS9600S_08

更新时间: 2024-11-13 03:36:27
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD /
页数 文件大小 规格书
9页 502K
描述
Dual N-Channel PowerTrench㈢ MOSFET

FDMS9600S_08 数据手册

 浏览型号FDMS9600S_08的Datasheet PDF文件第2页浏览型号FDMS9600S_08的Datasheet PDF文件第3页浏览型号FDMS9600S_08的Datasheet PDF文件第4页浏览型号FDMS9600S_08的Datasheet PDF文件第5页浏览型号FDMS9600S_08的Datasheet PDF文件第6页浏览型号FDMS9600S_08的Datasheet PDF文件第7页 
September 2008  
FDMS9600S  
tm  
Dual N-Channel PowerTrench® MOSFET  
Q1: 30V, 32A, 8.5mQ2: 30V, 30A, 5.5mΩ  
Features  
General Description  
Q1: N-Channel  
This device includes two specialized MOSFETs in a unique dual  
Power 56 package. It is designed to provide an optimal  
Synchronous Buck power stage in terms of efficiency and PCB  
utilization. The low switching loss "High Side" MOSFET is com-  
plemented by a Low Conduction Loss "Low Side" SyncFET.  
„ Max rDS(on) = 8.5mat VGS = 10V, ID = 12A  
„ Max rDS(on) = 12.4mat VGS = 4.5V, ID = 10A  
Q2: N-Channel  
„ Max rDS(on) = 5.5mat VGS = 10V, ID = 16A  
„ Max rDS(on) = 7.0mat VGS = 4.5V, ID = 14A  
Applications  
Synchronous Buck Converter for:  
„ Low Qg high side MOSFET  
„ Notebook System Power  
„ Low rDS(on) low side MOSFET  
„ Thermally efficient dual Power 56 package  
„ Pinout optimized for simple PCB design  
„ RoHS Compliant  
„ General Purpose Point of Load  
G1  
D1  
Q2  
D1  
5
6
7
8
4
3
2
1
D1  
D1  
S1/D2  
G2  
S2  
S2  
Q1  
S2  
Power 56  
MOSFET Maximum Ratings TA = 25°C unless otherwise noted  
Symbol  
VDS  
VGS  
Parameter  
Q1  
30  
Q2  
30  
Units  
Drain to Source Voltage  
Gate to Source Voltage  
V
V
±20  
32  
±20  
30  
Drain Current  
-Continuous (Package limited) TC = 25°C  
-Continuous (Silicon limited) TC = 25°C  
55  
108  
16  
ID  
A
-Continuous  
-Pulsed  
TA = 25°C  
(Note 1a)  
12  
60  
60  
Power Dissipation for Single Operation  
Operating and Storage Junction Temperature Range  
(Note 1a)  
(Note 1b)  
2.5  
1.0  
PD  
W
TJ, TSTG  
-55 to +150  
°C  
Thermal Characteristics  
RθJA  
RθJA  
RθJC  
Thermal Resistance, Junction to Ambient  
(Note 1a)  
(Note 1b)  
50  
Thermal Resistance, Junction to Ambient  
Thermal Resistance, Junction to Case  
120  
°C/W  
3
1.2  
Package Marking and Ordering Information  
Device Marking  
Device  
Package  
Reel Size  
Tape Width  
Quantity  
3000 units  
FDMS9600S  
FDMS9600S  
Power 56  
13”  
12mm  
1
©2008 Fairchild Semiconductor Corporation  
FDMS9600S Rev.D1  
www.fairchildsemi.com  

与FDMS9600S_08相关器件

型号 品牌 获取价格 描述 数据表
FDMS9620S ONSEMI

获取价格

双 N 沟道,PowerTrench® MOSFET,30V
FDMS9620S FAIRCHILD

获取价格

Dual N-Channel PowerTrench㈢ MOSFET Q1: 30V, 1
FDMS9620S_07 FAIRCHILD

获取价格

Dual N-Channel PowerTrench㈢ MOSFET
FDMT1D3N08B ONSEMI

获取价格

N 沟道,双 CoolTM 88 PowerTrench® MOSFET,80V,164A
FDMT800100DC ONSEMI

获取价格

N 沟道 Dual Cool™ 88 PowerTrench® MOSFET 100 V、
FDMT800120DC ONSEMI

获取价格

N 沟道,双 CoolTM 88 PowerTrench® MOSFET,120V,128
FDMT800150DC ONSEMI

获取价格

N 沟道双 CoolTM 88 PowerTrench® MOSFET 150V,99A,
FDMT800152DC ONSEMI

获取价格

N 沟道,双 Cool™ 88 PowerTrench® MOSFET,150V,72A,
FDMT80040DC ONSEMI

获取价格

N 沟道双 CoolTM 88 PowerTrench® MOSFET 40V,420A,
FDMT80060DC ONSEMI

获取价格

N 沟道,双 CoolTM 88 PowerTrench® MOSFET,60V, 292