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FDMS9408L-F085 PDF预览

FDMS9408L-F085

更新时间: 2024-11-14 11:13:43
品牌 Logo 应用领域
安森美 - ONSEMI 开关光电二极管晶体管
页数 文件大小 规格书
7页 560K
描述
N 沟道,逻辑电平,PowerTrench® MOSFET,40V,80A,1.7mΩ

FDMS9408L-F085 技术参数

是否无铅: 不含铅生命周期:End Of Life
包装说明:SMALL OUTLINE, R-PDSO-F5Reach Compliance Code:not_compliant
风险等级:5.6雪崩能效等级(Eas):123 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:40 V最大漏极电流 (ID):80 A
最大漏源导通电阻:0.0025 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-F5JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:5工作模式:ENHANCEMENT MODE
最高工作温度:175 °C最低工作温度:-55 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL参考标准:AEC-Q101
表面贴装:YES端子面层:Tin (Sn)
端子形式:FLAT端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICON最大关闭时间(toff):126 ns
最大开启时间(吨):40 nsBase Number Matches:1

FDMS9408L-F085 数据手册

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