Datasheet > FDMS8680-F121

FDMS8680-F121

更新时间： 2024-09-25 21:16:47

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
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7页	239K
描述
Transistor

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技术参数
数据手册

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FDMS8680-F121 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.84
Base Number Matches：	1

FDMS8680-F121 数据手册

May 2009

FDMS8680

N-Channel PowerTrench^®MOSFETꢀ

30V, 35A, 7.0m:

Features

General Description

Max r_DS(on)= 7.0m:ꢀat V_GS= 10V, I_D= 14A

Max r_DS(on)= 11.0m: at V_GS= 4.5V, I_D= 11.5A

The FDMS8680 has been designed to minimize losses in power

conversion application. Advancements in both silicon and

package technologies have been combined to offer the lowest

r_DS(on)while maintaining excellent switching performance.

Advanced Package and Silicon combination for

low r_DS(on)and high efficiency

Applications

MSL1 robust package design

RoHS Compliant

Low Side for Synchronous Buck to Power Core Processor

Secondary Side Synchronous Rectifier

Low Side Switch in POL DC/DC Converter

Oring FET/ Load Switch

Top

Bottom

Pin 1

Power 56

MOSFET Maximum Ratings T_A= 25°C unless otherwise noted

Symbol

V_DS

V_GS

Parameter

Ratings

Units

Drain to Source Voltage

Gate to Source Voltage

Drain Current -Continuous (Package limited)

-Continuous (Silicon limited)

-Continuous

T_C= 25°C

T_A= 25°C

I_D

(Note 1a)

(Note 3)

-Pulsed

100

E_AS

Single Pulse Avalanche Energy

Power Dissipation

216

T_C= 25°C

T_A= 25°C

P_D

Power Dissipation

(Note 1a)

2.5

T_J, T_STG

Operating and Storage Junction Temperature Range

-55 to +150

°C

Thermal Characteristics

R_TJC

R_TJA

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

2.5

°C/W

(Note 1a)

Package Marking and Ordering Information

Device Marking

Device

Package

Reel Size

Tape Width

12mm

Quantity

FDMS8680

Power 56

13"

3000units

FDMS8680 Rev.C2

www.fairchildsemi.com

12 3 4 5 6 7

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