Datasheet > FDMC7570S

FDMC7570S

更新时间： 2024-11-19 11:11:51

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
8页	478K
描述
N 沟道 Power Trench® SyncFET™ 25V，40A，2mΩ

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中文翻译

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数据手册

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FDMC7570S 数据手册

FDMC7570S

MOSFET – N-Channel,

POWERTRENCH⁾,

SyncFETt

25 V, 40 A, 2 mW

www.onsemi.com

General Description

The FDMC7570S has been designed to minimize losses in power

conversion application. Advancements in both silicon and package

Pin 1

technologies have been combined to offer the lowest R

while

DS(on)

maintaining excellent switching performance. This device has the

added benefit of an efficient monolithic Schottky body diode.

Features

Power 33

PQFN8

CASE 483AK

• Max R

= 2 mW at V = 10 V, I = 27 A

GS D

DS(on)

= 2.9 mW at V = 4.5 V, I = 21.5 A

DS(on)

• Advanced Package and Combination for Low R

Efficiency

and High

DS(on)

PIN ASSIGNMENT

• SyncFET Schottky Body Diode

• 100% UIL Tested

• These Devices are Pb−Free and are RoHS Compliant

Applications

• Synchronous Rectifier for DC/DC Converters

• Notebook Vcore/GPU Low Side Switch

• Networking Point of Load Low Side Switch

• Telecom Secondary Side Rectification

MARKING DIAGRAM

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Parameter

Drain to Source Voltage

Symbol

Rating

Unit

&Y&Z&3&K

FDMC

Gate to Source Voltage (Note 4)

7570S

Drain Current

− Continuous (Package limited) T = 25°C

132

− Continuous (Silicon limited) T = 25°C

− Continuous T = 25°C (Note 1a)

− Pulsed

120

= ON Semiconductor Logo

= Assembly Plant Code

= 3−Digit Data Code

Single Pulse Avalanche Energy (Note 3)

144

Power Dissipation

T = 25°C

= 2−Digit Lot Traceability Code

FDMC7570S

= Specific Device Code

Power Dissipation T = 25°C (Note 1a)

2.3

Operating and Storage Junction

Temperature Range

T , T

−55 to +150

°C

STG

ORDERING INFORMATION

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

†

Device

Package

Shipping

FDMC7570S

PGFN8

3,000 /

(Pb−Free)

Tape & Reel

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

Publication Order Number:

June, 2019 − Rev. 3

FDMC7570S/D

12 3 4 5 6 7 8

中文翻译

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与FDMC7570S相关器件

型号	品牌	获取价格	描述	数据表
FDMC7572S	FAIRCHILD	获取价格	N-Channel Power TrenchÂ® SyncFETTM 25 V, 40 A
FDMC7572S	ONSEMI	获取价格	N 沟道，Power Trench® SyncFET™，25V，40A，3.15mΩ
FDMC7582	ONSEMI	获取价格	25V N沟道PowerTrench® MOSFET
FDMC7660	FAIRCHILD	获取价格	N-Channel PowerTrench® MOSFET 30 V, 20 A, 2.2
FDMC7660	ONSEMI	获取价格	N 沟道，PowerTrench® MOSFET，30V，20A，2.2mΩ
FDMC7660_12	FAIRCHILD	获取价格	N-Channel PowerTrenchÂ® MOSFET 30 V, 20 A, 2.
FDMC7660DC	FAIRCHILD	获取价格	DUAL COOLâ¢ PACKAGE POWERTRENCHÂ® MOSFETs
FDMC7660DC	ONSEMI	获取价格	N 沟道，双 CoolTM 33 PowerTrench® MOSFET，30V，40A，
FDMC7660S	FAIRCHILD	获取价格	N-Channel Power Trench® SyncFET 30 V, 20 A, 2
FDMC7660S	ONSEMI	获取价格	N 沟道，Power Trench® SyncFET™，30V，20A，2.2mΩ

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