Datasheet > FDMC7208S_12

FDMC7208S_12

更新时间： 2024-11-20 12:23:35

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
12页	464K
描述
Dual N-Channel PowerTrenchÂ® MOSFET Q1: 30 V, 12 A, 9.0 mÎ© Q2: 30 V, 16 A, 6.4 mÎ©

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数据手册

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FDMC7208S_12 数据手册

August 2012

FDMC7208S

Dual N-Channel PowerTrench^®MOSFET

Q1: 30 V, 12 A, 9.0 mΩ Q2: 30 V, 16 A, 6.4 mΩ

Features

General Description

Q1: N-Channel

This device includes two 30V N-Channel MOSFETs in a dual

Power 33 (3 mm X 3 mm MLP) package. The package is en-

hanced for exceptional thermal performance.

Max r_DS(on)= 9.0 mΩ at V_GS= 10 V, I_D= 12 A

Max r_DS(on)= 11.0 mΩ at V_GS= 4.5 V, I_D= 11 A

Applications

Q2: N-Channel

Computing

Max r_DS(on)= 6.4 mΩ at V_GS= 10 V, I_D= 16 A

Max r_DS(on)= 7.5 mΩ at V_GS= 4.5 V, I_D= 13.5 A

Communications

General Purpose Point of Load

Notebook System

Termination is Lead-free and RoHS Compliant

Pin 1

G1 S1 S1 S1

S2 S2

G2 S2

Power 33

MOSFET Maximum Ratings T_A= 25 °C unless otherwise noted

Symbol

V_DS

V_GS

Parameter

Units

Drain to Source Voltage

Gate to Source Voltage

(Note 4)

T_C= 25 °C

T_A= 25 °C

±20

±12

Drain Current -Continuous (Package limited)

-Continuous

I_D

12^1a

16^1b

-Pulsed

E_AS

Single Pulse Avalanche Energy

Power Dissipation for Single Operation

Operating and Storage Junction Temperature Range

(Note 3)

T_A= 25 °C

1.9^1a

0.8^1c

1.9^1b

0.8^1d

P_D

T_J, T_STG

-55 to +150

°C

Thermal Characteristics

R_θJA

Thermal Resistance, Junction to Ambient

65^1a

155^1c

65^1b

155^1d

°C/W

Package Marking and Ordering Information

Device Marking

Device

Package

Reel Size

13 ”

Tape Width

Quantity

FDMC7208S

Power 33

12 mm

3000 units

FDMC7208S Rev.C2

www.fairchildsemi.com

12 3 4 5 6 7...12

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