Datasheet > FDC637AN

FDC637AN

更新时间： 2025-09-15 19:25:23

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微碧 - VBSEMI		/
页数	文件大小	规格书
9页	912K
描述
元器件封装:TSOT-6;

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FDC637AN 数据手册

FDC637AN

www.VBsemi.tw

N-Channel 30 V (D-S) MOSFET

FEATURES

PRODUCT SUMMARY

•

Halogen-free According to IEC 61249-2-21

_D(A)^{a, e}

Definition

V_DS(V)

R_DS(on)()

Q_g(Typ.)

•

TrenchFET^®Power MOSFET

Low On-Resistance

0.030 at V_GS= 10 V

0.040 at V_GS= 4.5 V

4.2 nC

• 100 % R_gTested

• Compliant to RoHS Directive 2002/95/EC

TSOP-6

APPLICATIONS

•

DC/DC Converters, High Speed Switching

Top View

ABSOLUTE MAXIMUM RATINGS (T = 25 °C, unless otherwise noted)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

± 20

6^e

5.5^{b, c}

4.4^{b, c}

_C= 25 °C

_C= 70 °C

Continuous Drain Current (T_J= 150 °C)

I_D

T_A= 25 °C

T_A= 70 °C

Pulsed Drain Current (t = 300 µs)

I_DM

I_S

_C= 25 °C

_A= 25 °C

2.1

1.1^{b, c}

Continuous Source-Drain Diode Current

T_C= 25 °C

_C= 70 °C

2.5

1.6

Maximum Power Dissipation

P_D

1.3^{b, c}

0.8^{b, c}

T_A= 25 °C

T_A= 70 °C

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

T_J, T_stg

- 55 to 150

260

°C

THERMAL RESISTANCE RATINGS

Parameter

Maximum Junction-to-Ambient^{b, d}

Symbol

Typical

Maximum

100

Unit

t  5 s

Steady State

R_thJA

R_thJF

°C/W

Maximum Junction-to-Foot (Drain)

Notes:

a. Based on T_C= 25 °C.

b. Surface mounted on 1" x 1" FR4 board.

c. t = 5 s.

d. Maximum under steady state conditions is 166 °C/W.

e. Package limited.

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