Datasheet > EMB28C04G

EMB28C04G

更新时间： 2024-11-21 17:15:07

品牌	Logo	应用领域
杰力科技 - EXCELLIANCE		/
页数	文件大小	规格书
8页	203K
描述
SOP-8

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数据手册

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EMB28C04G 数据手册

EMB28C04G

N & P‐Channel Logic Level Enhancement Mode Field Effect Transistor

Product Summary:

N‐CH

40V

P‐CH

‐40V

44mΩ

‐6A

BVDSS

28mΩ

DSON (MAX.)

Pb‐Free Lead Plating & Halogen Free

ABSOLUTE MAXIMUM RATINGS (T_A= 25 °C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS

SYMBOL

LIMITS

UNIT

Gate‐Source Voltage

V_GS

N‐CH

±20

P‐CH

±20

‐6

T_A= 25 °C

Continuous Drain Current

I_D

T_A= 70 °C

‐5

Pulsed Drain Current¹

I_DM

‐24

T_A= 25 °C

Power Dissipation

P_D

°C

T_A= 70 °C

1.3

Operating Junction & Storage Temperature Range

T_j, T_stg

‐55 to 150

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE

Junction‐to‐Case

Junction‐to‐Ambient

SYMBOL

R_JC

TYPICAL

MAXIMUM

UNIT

°C / W

62.5

R_JA

¹Pulse width limited by maximum junction temperature.

²Duty cycle  1％

2013/9/3

p.1

12 3 4 5 6 7 8

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