Datasheet > EMB30B03V

EMB30B03V

更新时间： 2024-09-25 17:15:43

品牌	Logo	应用领域
杰力科技 - EXCELLIANCE		/
页数	文件大小	规格书
5页	201K
描述
EDFN3X3

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中文翻译

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EMB30B03V 数据手册

EMB30B03V

Dual P‐Channel Logic Level Enhancement Mode Field Effect Transistor

Product Summary:

BV^DSS

RDSON (MAX.)

‐30V

35mΩ

‐6.5A

Pb‐Free Lead Plating & Halogen Free

ABSOLUTE MAXIMUM RATINGS (T_A= 25 °C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS

SYMBOL

LIMITS

±20

‐6.5

‐4.9

‐26

UNIT

Gate‐Source Voltage

V_GS

T_A= 25 °C

Continuous Drain Current

I_D

T_A= 100 °C

Pulsed Drain Current¹

I_DM

T_A= 25 °C

Power Dissipation

P_D

°C

T_A= 100 °C

0.8

Operating Junction & Storage Temperature Range

T_j, T_stg

‐55 to 150

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE

SYMBOL

R_JC

TYPICAL

MAXIMUM

UNIT

Junction‐to‐Case

Junction‐to‐Ambient³

°C / W

62.5

R_JA

¹Pulse width limited by maximum junction temperature.

²Duty cycle  1％

³62.5°C / W when mounted on a 1 in²pad of 2 oz copper.

2017/8/28ꢀ

p.1ꢀ

12 3 4 5

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