Datasheet > EMB44P04A

EMB44P04A

更新时间： 2024-11-19 17:15:51

品牌	Logo	应用领域
杰力科技 - EXCELLIANCE		/
页数	文件大小	规格书
6页	837K
描述
TO252-2

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中文翻译

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EMB44P04A 数据手册

EMB44P04A

P-Channel Logic Level Enhancement Mode Field Effect Transistor

Product Summary:

BVDSS

-40V

44mΩ

-25A

RDSON (MAX.)

P Channel MOSFET

UIS, Rg 100% Tested

Pb-Free Lead Plating & Halogen Free

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS

SYMBOL

LIMITS

±20

-25

UNIT

Gate-Source Voltage

V_GS

T_C= 25 °C

Continuous Drain Current

I_D

T_C= 100 °C

-16

Pulsed Drain Current¹

I_DM

I_AS

-100

-23

Avalanche Current

Avalanche Energy

L = 0.1mH

L = 0.05mH

T_C= 25 °C

T_C= 100 °C

E_AS

E_AR

Repetitive Avalanche Energy²

Power Dissipation

P_D

°C

Operating Junction & Storage Temperature Range

T_j, T_stg

-55 to 150

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE

SYMBOL

R_JC

TYPICAL

MAXIMUM

UNIT

Junction-to-Case

2.5

°C / W

Junction-to-Ambient

R_JA

¹Pulse width limited by maximum junction temperature.

²Duty cycle  1％

2019/1/7

p.1

12 3 4 5 6

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