5秒后页面跳转
EMB40P06A PDF预览

EMB40P06A

更新时间: 2024-11-19 17:15:23
品牌 Logo 应用领域
杰力科技 - EXCELLIANCE /
页数 文件大小 规格书
6页 191K
描述
TO252-2

EMB40P06A 数据手册

 浏览型号EMB40P06A的Datasheet PDF文件第2页浏览型号EMB40P06A的Datasheet PDF文件第3页浏览型号EMB40P06A的Datasheet PDF文件第4页浏览型号EMB40P06A的Datasheet PDF文件第5页浏览型号EMB40P06A的Datasheet PDF文件第6页 
EMB40P06A  
PChannel Logic Level Enhancement Mode Field Effect Transistor  
Product Summary:  
D
BVDSS  
RDSON (MAX.)  
ID  
60V  
62mΩ  
17A  
G
S
UIS, Rg 100% Tested  
PbFree Lead Plating & Halogen Free  
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)  
PARAMETERS/TEST CONDITIONS  
SYMBOL  
LIMITS  
±20  
17  
UNIT  
GateSource Voltage  
VGS  
V
TC = 25 °C  
Continuous Drain Current  
ID  
TC = 100 °C  
11  
A
Pulsed Drain Current1  
IDM  
IAS  
60  
Avalanche Current  
12  
L = 0.1mH, ID=12A, RG=25Ω  
L = 0.05mH  
Avalanche Energy  
EAS  
EAR  
7.2  
mJ  
Repetitive Avalanche Energy2  
3.6  
TC = 25 °C  
27  
Power Dissipation  
PD  
W
°C  
TC = 100 °C  
8
Operating Junction & Storage Temperature Range  
Tj, Tstg  
55 to 150  
THERMAL RESISTANCE RATINGS  
THERMAL RESISTANCE  
SYMBOL  
RJC  
TYPICAL  
MAXIMUM  
UNIT  
JunctiontoCase  
4.5  
85  
°C / W  
JunctiontoAmbient  
RJA  
1Pulse width limited by maximum junction temperature.  
2Duty cycle 1%  
2013/6/13  
p.1