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EMB40P06G PDF预览

EMB40P06G

更新时间: 2024-11-19 17:15:23
品牌 Logo 应用领域
杰力科技 - EXCELLIANCE /
页数 文件大小 规格书
5页 178K
描述
SOP-8

EMB40P06G 数据手册

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EMB40P06G  
PChannel Logic Level Enhancement Mode Field Effect Transistor  
Product Summary:  
D
BVDSS  
60V  
40mΩ  
7.5A  
R
DSON (MAX.)  
G
ID  
S
UIS, Rg 100% Tested  
PbFree Lead Plating & Halogen Free  
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)  
PARAMETERS/TEST CONDITIONS  
SYMBOL  
LIMITS  
±20  
7.5  
5  
UNIT  
GateSource Voltage  
VGS  
V
TA = 25 °C  
Continuous Drain Current  
ID  
TA = 100 °C  
A
Pulsed Drain Current1  
IDM  
IAS  
30  
Avalanche Current  
5  
L = 0.1mH, ID=5A, RG=25Ω  
L = 0.05mH  
Avalanche Energy  
EAS  
EAR  
1.25  
0.625  
2.5  
mJ  
Repetitive Avalanche Energy2  
TA = 25 °C  
Power Dissipation  
PD  
W
°C  
TA = 100 °C  
1
Operating Junction & Storage Temperature Range  
Tj, Tstg  
55 to 150  
THERMAL RESISTANCE RATINGS  
THERMAL RESISTANCE  
SYMBOL  
RJC  
TYPICAL  
MAXIMUM  
UNIT  
JunctiontoCase  
25  
50  
°C / W  
JunctiontoAmbient  
RJA  
1Pulse width limited by maximum junction temperature.  
2Duty cycle 1%  
2013/6/13  
p.1  

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