Datasheet > EMB55N03JS

EMB55N03JS

更新时间： 2024-05-23 22:22:26

品牌	Logo	应用领域
杰力科技 - EXCELLIANCE		/
页数	文件大小	规格书
5页	228K
描述
SOT23-3

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中文翻译

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数据手册

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EMB55N03JS 数据手册

EMB55N03JS

N‐Channel Logic Level Enhancement Mode Field Effect Transistor

Product Summary:

BV^DSS

30V

55mΩ

3.5A

DSON (MAX.)

Pb‐Free Lead Plating & Halogen Free

ABSOLUTE MAXIMUM RATINGS (T_A= 25 °C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS

SYMBOL

LIMITS

±20

3.5

UNIT

Gate‐Source Voltage

V_GS

T_A= 25 °C

Continuous Drain Current

I_D

T_A= 70 °C

2.4

Pulsed Drain Current¹

I_DM

T_A= 25 °C

1.04

Power Dissipation

P_D

°C

T_A= 70 °C

0.66

Operating Junction & Storage Temperature Range

T_j, T_stg

‐55 to 150

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE

Junction‐to‐Ambient³

SYMBOL

R_JA

TYPICAL

MAXIMUM

UNIT

(

T ≤ 10sec

)

°C / W

120

(

Steady State

)

¹Pulse width limited by maximum junction temperature.

²Duty cycle  1％

³The device mounted on a 1 in²pad of 2 oz copper.

2016/10/28ꢀ

p.1ꢀ

12 3 4 5

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