Datasheet > EMB80P03JS

EMB80P03JS

更新时间： 2024-11-19 17:15:55

品牌	Logo	应用领域
杰力科技 - EXCELLIANCE		/
页数	文件大小	规格书
6页	168K
描述
SOT23-3

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中文翻译

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数据手册

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EMB80P03JS 数据手册

EMB80P03JS

P-Channel Logic Level Enhancement Mode Field Effect Transistor

Product Summary:

BV^DSS

-30V

85mΩ

-3.6A

DSON (MAX.)

Pb-Free Lead Plating & Halogen Free

ABSOLUTE MAXIMUM RATINGS (T_A= 25 °C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS

SYMBOL

LIMITS

±25

UNIT

Gate-Source Voltage

V_GS

T_A= 25 °C

-3.6

Continuous Drain Current

I_D

T_A= 70 °C

-2.5

Pulsed Drain Current¹

I_DM

-14

T_A= 25 °C

1.04

Power Dissipation

P_D

°C

T_A= 70 °C

0.66

Operating Junction & Storage Temperature Range

T_j, T_stg

-55 to 150

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE

SYMBOL

R_θJA

TYPICAL

MAXIMUM

UNIT

(

T ≤ 10sec

)

Junction-to-Ambient³

°C / W

120

(

Steady State

)

¹Pulse width limited by maximum junction temperature.

²Duty cycle ≤ 1％

³The device mounted on a 1 in²pad of 2 oz copper.

2018/8/13

p.1

12 3 4 5 6

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