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EMB50P03J PDF预览

EMB50P03J

更新时间: 2024-06-13 09:03:05
品牌 Logo 应用领域
杰力科技 - EXCELLIANCE /
页数 文件大小 规格书
6页 883K
描述
SOT23-3

EMB50P03J 技术参数

生命周期:Contact Manufacturer包装说明:SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code:unknown风险等级:5.76
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:30 V
最大漏极电流 (ID):4.5 A最大漏源导通电阻:0.05 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PDSO-G3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最低工作温度:-55 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:P-CHANNEL
最大脉冲漏极电流 (IDM):18 A表面贴装:YES
端子形式:GULL WING端子位置:DUAL
晶体管元件材料:SILICONBase Number Matches:1

EMB50P03J 数据手册

 浏览型号EMB50P03J的Datasheet PDF文件第2页浏览型号EMB50P03J的Datasheet PDF文件第3页浏览型号EMB50P03J的Datasheet PDF文件第4页浏览型号EMB50P03J的Datasheet PDF文件第5页浏览型号EMB50P03J的Datasheet PDF文件第6页 
EMB50P03J  
P-Channel Logic Level Enhancement Mode Field Effect Transistor  
Product Summary:  
BVDSS  
-30V  
50mΩ  
-4.5A  
RDSON (MAX.)  
ID  
P Channel MOSFET  
Pb-Free Lead Plating & Halogen Free  
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)  
PARAMETERS/TEST CONDITIONS  
SYMBOL  
LIMITS  
±20  
UNIT  
Gate-Source Voltage  
VGS  
V
TA = 25 °C  
-4.5  
Continuous Drain Current  
ID  
TA = 70 °C  
-3.5  
A
Pulsed Drain Current1  
IDM  
-18  
TA = 25 °C  
1.25  
Power Dissipation  
PD  
W
°C  
TA = 70 °C  
0.8  
Operating Junction & Storage Temperature Range  
Tj, Tstg  
-55 to 150  
THERMAL RESISTANCE RATINGS  
THERMAL RESISTANCE  
Junction-to-Ambient3  
Junction-to-Lead4  
SYMBOL  
RJA  
TYPICAL  
MAXIMUM  
UNIT  
100  
55  
°C / W  
RJL  
1Pulse width limited by maximum junction temperature.  
2Duty cycle 1%  
3100°C / W when mounted on a 1 in2 pad of 2 oz copper.  
4 RJA is the sum of the thermal impedance from junction to lead RJL and lead to ambient.  
2019/7/24  
p.1  

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