5秒后页面跳转
EMB4F PDF预览

EMB4F

更新时间: 2024-11-21 17:14:59
品牌 Logo 应用领域
星海 - CZSTARSEA /
页数 文件大小 规格书
2页 84K
描述
MBF

EMB4F 数据手册

 浏览型号EMB4F的Datasheet PDF文件第2页 
EMB2F THRU EMB8F  
GLASS PASSIVATED SUPER FAST RECOVERY BRIDGE RECTIFIERS  
Voltage Range - 200 to 600Volts Current -0.5/0.8 Ampere  
MBF  
FEATURES  
Ideal for printed circuit board  
Reliable low cost construction utilizing  
molded plastic technique  
0.276(7.00)  
0.252(6.40)  
0.059(1.50)  
Max  
High temperature soldering guaranteed:  
260 / 10 seconds at 5 lbs., (2.3kg) tension  
Small size, simple installation  
Leads solderable per MIL-STD-202,Method 208  
High surge current capability  
0.195(4.95)  
0.177(4.50)  
0.106 (2.70)  
0.091 (2.30)  
0.028(0.70)  
0.020(0.50)  
Super fast switching for high efficiency  
Glass passivated chip junction  
Green compound(halogen&Sb2O3 free)  
0.161 (4.10)  
0.142 (3.60)  
MECHANICAL DATA  
0.067(1.70)  
0.051(1.30)  
0.014 (0.35)  
0.006(0.150)  
Case: Molded plastic body  
Terminals: Plated leads solderable per MIL-STD-750,  
Method 2026  
Polarity: Polarity symbols marked on case  
Mounting Position: Any  
0.043(1.10)  
0.020(0.50)  
0.008 (0.20)  
Max  
Dimensions in inches and (millimeters)  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at 25 ambient temperature unless otherwise specified.  
Single phase half-wave 60Hz,resistive or inductive load, for capacitive load derate current by 20%.  
SYMBOLS  
UNITS  
EMB2F  
EMB4F  
EMB6F  
EMB8F  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
VRRM  
VRMS  
VDC  
100  
70  
200  
140  
200  
400  
280  
400  
600  
420  
600  
V
V
V
Maximum DC blocking voltage  
Maximum average forward rectified current  
On glass-epoxy P.C.B.(Note1)  
On aluminum substrate(Note2)  
Peak forward surge current,  
100  
IF(AV)  
IFSM  
0.5  
0.8  
A
30  
8.3ms single half sine-wave superimposed on  
rated load  
A
V
Maximum instantaneous forward voltage drop  
per leg at 0.4A  
VF  
IR  
0.95  
1.25  
1.7  
Maximum DC reverse current  
at rated DC blocking voltage  
TA=25  
uA  
uA  
5.0  
TA=125  
500  
Typical thermal resistance(NOTE 3)  
R JL  
R JA  
trr  
30  
88  
/W  
ns  
Maximum reverse recovery time  
(NOTE 4)  
35  
Operating temperature range  
storage temperature range  
TJ  
-55 to +150  
-55 to +150  
TSTG  
NOTES:1.On glass epoxy P.C.B. mounted on 0.05x0.05''(1.3x1.3mm) pads.  
2.On aluminum substrate P.C.B. with an area of 0.8''x0.8''(20x20mm) mounted on 0.05X0.05''(1.3X1.3mm) solder pad.  
3.Thermal resistance form junction to ambient and junction to lead mounted on P.C.B. with 0.2X0.2''(5X5mm)  
4.Reverse recovery condition IF=0.5A,IR=1.0A,Irr=0.25A.  
copper pads.  
DN:S16F04A1  
STAR SEA  

与EMB4F相关器件

型号 品牌 获取价格 描述 数据表
EMB4S CZSTARSEA

获取价格

MBS
EMB4T2R ROHM

获取价格

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon, ROHS CO
EMB50B03G EXCELLIANCE

获取价格

SOP-8
EMB50N10A EXCELLIANCE

获取价格

TO252-2
EMB50N10G EXCELLIANCE

获取价格

SOP-8
EMB50P03J EXCELLIANCE

获取价格

SOT23-3
EMB50P03JS EXCELLIANCE

获取价格

SOT23-3
EMB50P03K EXCELLIANCE

获取价格

TSOT23-6
EMB51 ROHM

获取价格

General purpose Dual digital transistor
EMB51_16 ROHM

获取价格

General purpose Dual digital transistor