5秒后页面跳转
EMB32A03G PDF预览

EMB32A03G

更新时间: 2024-09-25 17:15:55
品牌 Logo 应用领域
杰力科技 - EXCELLIANCE /
页数 文件大小 规格书
5页 189K
描述
SOP-8

EMB32A03G 数据手册

 浏览型号EMB32A03G的Datasheet PDF文件第2页浏览型号EMB32A03G的Datasheet PDF文件第3页浏览型号EMB32A03G的Datasheet PDF文件第4页浏览型号EMB32A03G的Datasheet PDF文件第5页 
EMB32A03G  
Dual NChannel Logic Level Enhancement Mode Field Effect Transistor  
Product Summary:  
BVDSS  
30V  
32mΩ  
6.5A  
R
DSON (MAX.)  
ID  
PbFree Lead Plating & Halogen Free  
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)  
PARAMETERS/TEST CONDITIONS  
SYMBOL  
LIMITS  
±20  
6.5  
5.5  
26  
UNIT  
GateSource Voltage  
VGS  
V
TA = 25 °C  
Continuous Drain Current  
ID  
TA = 100 °C  
A
Pulsed Drain Current1  
IDM  
TA = 25 °C  
2
Power Dissipation  
PD  
W
°C  
TA = 100 °C  
0.8  
Operating Junction & Storage Temperature Range  
Tj, Tstg  
55 to 150  
THERMAL RESISTANCE RATINGS  
THERMAL RESISTANCE  
SYMBOL  
RJC  
TYPICAL  
MAXIMUM  
UNIT  
JunctiontoCase  
JunctiontoAmbient3  
25  
°C / W  
62.5  
RJA  
1Pulse width limited by maximum junction temperature.  
2Duty cycle 1%  
362.5°C / W when mounted on a 1 in2 pad of 2 oz copper.  
2012/10/25  
p.1