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EMB3T2R PDF预览

EMB3T2R

更新时间: 2024-02-26 17:26:02
品牌 Logo 应用领域
罗姆 - ROHM 开关光电二极管晶体管
页数 文件大小 规格书
7页 414K
描述
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon, EMT6, 6 PIN

EMB3T2R 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:SC-107
包装说明:SMALL OUTLINE, R-PDSO-F6针数:6
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.21.00.75Factory Lead Time:13 weeks
风险等级:1.16其他特性:BUILT-IN BIAS RESISTOR
最大集电极电流 (IC):0.1 A集电极-发射极最大电压:50 V
配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR最小直流电流增益 (hFE):100
JESD-30 代码:R-PDSO-F6JESD-609代码:e2
湿度敏感等级:1元件数量:2
端子数量:6最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:PNP最大功率耗散 (Abs):0.15 W
认证状态:Not Qualified子类别:BIP General Purpose Small Signal
表面贴装:YES端子面层:TIN COPPER
端子形式:FLAT端子位置:DUAL
处于峰值回流温度下的最长时间:10晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):250 MHz
Base Number Matches:1

EMB3T2R 数据手册

 浏览型号EMB3T2R的Datasheet PDF文件第2页浏览型号EMB3T2R的Datasheet PDF文件第3页浏览型号EMB3T2R的Datasheet PDF文件第4页浏览型号EMB3T2R的Datasheet PDF文件第5页浏览型号EMB3T2R的Datasheet PDF文件第6页浏览型号EMB3T2R的Datasheet PDF文件第7页 
EMB3 / UMB3N / IMB3A  
Datasheet  
PNP -100mA -50V Complex Digital Transistors (Bias Resistor Built-in Transistors)  
lOutline  
EMT6  
UMT6  
Parameter  
VCEO  
Tr1 and Tr2  
-50V  
-100mA  
4.7kW  
(6)  
(5)  
(4)  
4)  
(1)  
(2)  
IC(MAX.)  
R1  
(3)  
EMB3  
(SC-107C)  
UMB3N  
SOT-353 (SC-88)  
SMT6  
(4)  
(5)  
lFeatures  
(6)  
1) Built-In Biasing Resistors.  
(3)  
(2)  
2) Two DTA143T chips in one package.  
3) Built-in bias resistors enable the configuration of  
an inverter circuit without connecting external  
input resistors (see inner circuit).  
(1)  
IMB3A  
SOT-457 (SC-74)  
4) The bias resistors consist of thin-film resistors  
with complete isolation to allow negative biasing  
lInner circuit  
of the input. They also have the advantage of  
completely eliminating parasitic effects.  
5) Only the on/off conditions need to be set for  
operation, making the circuit design easy.  
6) Lead Free/RoHS Compliant.  
IMB3A  
EMB3 / UMB3N  
Collector  
Base  
(5)  
Emitter  
Collector  
(4)  
Base  
(5)  
Emitter  
(6)  
(6)  
(4)  
lApplication  
(1)  
(2)  
(3)  
(3)  
(2)  
(1)  
Emitter  
Base  
Collector  
Emitter  
Base  
Collector  
Inverter circuit, Interface circuit, Driver circuit  
lPackaging specifications  
Package  
size  
(mm)  
Basic  
ordering  
unit (pcs)  
Taping  
code  
Reel size Tape width  
Part No.  
Package  
Marking  
(mm)  
(mm)  
EMB3  
EMT6  
UMT6  
SMT6  
1616  
2021  
2928  
T2R  
TR  
180  
180  
180  
8
8
8
8,000  
B3  
B3  
B3  
UMB3N  
IMB3A  
3,000  
T108  
3,000  
www.rohm.com  
© 2012 ROHM Co., Ltd. All rights reserved.  
2012.06 - Rev.C  
1/6  

EMB3T2R 替代型号

型号 品牌 替代类型 描述 数据表
DDA143TH-7 DIODES

类似代替

PNP PRE-BIASED SMALL SIGNAL SOT-563 DUAL SURFACE MOUNT TRANSISTOR
DDA143TU-7 DIODES

功能相似

PNP PRE-BIASED SMALL SIGNAL SOT-63 DUAL SURFACE MOUNT TRANSISTOR

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