EMA4 / UMA4N / EMB4 / UMB4N / UMB8N /
FMA4A / IMB4A / IMB8A
Transistors
General purpose (dual digital transistors)
EMA4 / UMA4N / EMB4 / UMB4N / UMB8N /
FMA4A / IMB4A / IMB8A
!Features
1) Two DTA114T chips in a EMT or UMT or SMT package.
!Equivalent circuit
EMA4 / UMA4N
FMA4A
(3)
EMB4 / UMB4N
IMB4A
UMB8N
(3)
IMB8A
(4)
(3)
(2)
(1)
(4)
(5)
(6)
(2)
(1)
(5)
(6)
(1)
(4)
(5)
(3)
(2)
R1
R1
R1
R1
R1
R1
R1
R1
R1
R1
R1
R1
(2)
(4)
(5)
(1)
(3) (2) (1)
(5) (6)
(4)
(4)
(5)
(6)
(3)
(2)
(1)
!Absolute maximum ratings (Ta = 25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Symbol
Limits
Unit
V
VCBO
VCEO
VEBO
−50
−50
−5
V
V
Collector current
I
C
−100
mA
∗1
∗2
EMA4 / UMA4N / EMB4 / UMB4N / UMB8N
Power
150(TOTAL)
300(TOTAL)
150
Pd
mW
dissipation
FMA4A / IMB4A / IMB8A
Junction temperature
Storage temperature
Tj
°C
°C
Tstg
−55~+150
∗1 120mW per element must not be exceeded.
∗2 200mW per element must not be exceeded.
!Electrical characteristics (Ta = 25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Symbol
Min.
−50
−50
−5
−
Typ.
Max.
−
−
Conditions
Unit
V
BVCBO
−
−
I
I
I
C
=−50µA
=−1mA
BVCEO
BVEBO
V
C
−
−
−
−
V
E
=−50µA
CB=−50V
EB=−4V
I
CBO
EBO
CE(sat)
FE
−0.5
−0.5
−0.3
600
−
µA
µA
V
V
V
Emitter cutoff current
I
−
Collector-emitter saturation voltage
DC current transfer ratio
V
−
100
−
−
I
C
/I
CE=−5V, I
CE=−10V, I
B
=−10mA/−1mA
h
250
250
10
−
MHz
kΩ
V
V
C
=−1mA
Transition frequency
f
T
E
=5mA, f=100MHz
∗
Input resistance
R1
7
13
−
∗Transition frequency of the device.
!Package, marking, and packaging specifications
Type
EMA4
EMT5
A4
UMA4N
UMT5
A4
EMB4
EMT6
B4
UMB4N
UMT6
B4
UMB8N
FMA4A
SMT5
A4
IMB4A
SMT6
B4
IMB8A
SMT6
B8
Package
UMT6
B8
Marking
Code
T2R
TR
T2R
TN
TR
T148
3000
T110
3000
T108
3000
Basic ordering unit (pieces)
8000
3000
8000
3000
3000